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Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor

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Abstract

The purpose of this paper is to propose the enhancement of device detectors based on p-n junction in 4H-SiC for nuclear instrumentation. Particular emphasis is placed on the interest on using Boron isotope 10 as a Neutron Converter Layer in order to detect thermal neutrons. Here, we present the main results obtained during several irradiation tests performed in the Belgian Reactor 1 (BR1). We show the capability of our detectors by means of first results of the detector response at different reverse voltage biases and at different reactor power.

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Authors and Affiliations

  1. IM2NP (UMR CNRS 7334), Aix-Marseille University, Case 231, 13397, Marseille Cedex 20, France

    Vanessa Vervisch, Fatima Issa, Stéphane Biondo, Laurent Ottaviani & Wilfried Vervisch

  2. KIT-Neutron Laboratory, TU Dresden and Reactor Technology Helmholtz-Zentrum, Germany

    Dora Szalkai & Axel Klix

  3. SCK•CEN, Boeretang 200, B-2400, Mol, Belgium

    Ludo Vermeeren

  4. KTH, Electrum 229, 16440, Kista, Sweden

    Anders Hallen

  5. University of Oslo, PO Box 1048, Blindern NO-0316, Oslo, Norway

    Andrej Kuznetsov

  6. AMPERE (UMR 5005), INSA de Lyon, 21 Av. Capelle, 69621, Villeurbanne, France

    Mihai Lazar

  7. CEA, DEN, DER, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108, St-Paul-Lez-Durance, France

    Abdallah Lyoussi

Authors
  1. Vanessa Vervisch
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  2. Fatima Issa
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  3. Stéphane Biondo
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  4. Laurent Ottaviani
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  5. Wilfried Vervisch
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  6. Dora Szalkai
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  7. Ludo Vermeeren
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  8. Axel Klix
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  9. Anders Hallen
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  10. Andrej Kuznetsov
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  11. Mihai Lazar
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  12. Abdallah Lyoussi
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Vervisch, V., Issa, F., Biondo, S. et al. Thermal neutron detection enhancement by 10B implantation in silicon carbide sensor. MRS Online Proceedings Library 1693, 185–192 (2014). https://doi.org/10.1557/opl.2014.691

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  • DOI: https://doi.org/10.1557/opl.2014.691

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