Abstract
It is demonstrated that the temporal variation of the rate of the surface generation of charge carriers at a semiconductor-glass interface can be determined by measuring the kinetics of capacitance relaxation in the semiconductor-glass-metal structure. Ultrasonic treatment of the semiconductor-glass interface decreases the absolute value of the surface generation rate and modifies its temporal dependence.
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References
V. G. Litovchenko and A. P. Gorban’, in Principles of the Physics of Metal-Dielectric-Semiconductor Microelectronic Systems (Naukova Dumka, Kiev, 1978), Vol 1, pp. 21–27 [in Russian].
A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, in Electronics of SiO 2 Layers on Silicon (Leningrad. Gos. Univ., Leningrad, 1988), Vol. 1, pp. 6–10 [in Russian].
S. M. Repinskii, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 1050 (2001) [Semiconductors 35, 1006 (2001)].
A. F. Burenkov and F. N. Komarov, Mikroélektronika 17, 256 (1988).
V. A. Greben, Semiconductor Devices for High-Power High-Voltage Transformation Setups (Energiya, Moscow, 1978) [in Rissian].
O. V. Aleksandrov and N. N. Afonin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 19 (1998) [Semiconductors 32, 15 (1998)].
O. V. Aleksandrov and N. N. Afonin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 647 (2005) [Semiconductors 39, 615 (2005)].
P. B. Parchinskii, S. I. Vlasov, and U. T. Turgunov, Neorg. Mater. 38, 750 (2002).
S. I. Vlasov, M. A. Ergasheva, and T. P. Adylov, Pis’ma Zh. Tekh. Fiz. 31(10), 83 (2005) [Tech. Phys. Lett. 31, 444 (2005)].
P. B. Parchinskii and A. A. Nasirov, Pis’ma Zh. Tekh. Fiz. 27(18), 65 (2001) [Tech. Phys. Lett. 27, 786 (2001)].
S. I. Vlasov, P. B. Parchinskii, and B. A. Olmatov, Neorg. Mater. 36, 608 (2000).
J. S. Kang and D. K. Schroder, Phys. Stat. Sol. (a) 89(13), 1343 (1985).
M. Zerbst, Z. Angew. Phys., No 30, 22 (1962).
N. N Zaveryukhina, E. B. Zaveryukhina, S. I. Vlasov, and B. N. Zaveryukhin, Pis’ma Zh. Tekh. Fiz. 34(6), 36 (2008) [Tech. Phys. Lett. 34, 241 (2008)].
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Original Russian Text © S.I. Vlasov, A.V. Ovsyannikov, B.N. Zaveryukhin, 2009, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2009, Vol. 35, No. 7, pp. 41–45.
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Vlasov, S.I., Ovsyannikov, A.V. & Zaveryukhin, B.N. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface. Tech. Phys. Lett. 35, 312–314 (2009). https://doi.org/10.1134/S1063785009040075
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DOI: https://doi.org/10.1134/S1063785009040075