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Generation of propagation-invariant light beams from semiconductor light sources

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Abstract

We have studied the possibility of generating propagation-invariant (nondiffracting) light beams using various semiconductor sources of radiation. The propagation-invariant (Bessel) beams have been generated using cone-shaped lenses (axicones) with an apical angle of 178° and 170°, which provided beams with a central spot diameter of 100 and 10 μm, respectively. The radiation sources were represented by various types of light-emitting diodes, quasi-single-mode semiconductor vertical-cavity surface-emitting lasers and broad-stripe (100 μm) edge-emitting laser diodes. It is demonstrated that these semiconductor light sources offer a promising basis for the generation of propagation-invariant light beams in various devices (including optical tweezers) intended for manipulating micro- and nanodimensional objects.

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Correspondence to G. S. Sokolovskii.

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Original Russian Text © G.S. Sokolovskii, V.V. Dudelev, S.N. Losev, S.A. Zolotovskaya, A.G. Deryagin, V.I. Kuchinskii, E.U. Rafailov, W. Sibbett, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 24, pp. 75–82.

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Sokolovskii, G.S., Dudelev, V.V., Losev, S.N. et al. Generation of propagation-invariant light beams from semiconductor light sources. Tech. Phys. Lett. 34, 1075–1078 (2008). https://doi.org/10.1134/S1063785008120262

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  • DOI: https://doi.org/10.1134/S1063785008120262

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