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InGaAlN heterostructures for LEDs grown on patterned sapphire substrates

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Abstract

One of the main factors that limit the maximum attainable efficiency of InGaAlN-based light-emitting diode (LED) structures grown on standard sapphire substrates is the low efficacy of extracting light from devices. A promising solution of this problem consists in using specially profiled (patterned) sapphire substrates. A method for the formation of a special surface microrelief on the sapphire substrates is described. The properties of GaN epilayers and InGaAlN-based LED heterostructures grown on such substrates are presented.

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Authors and Affiliations

  1. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    W. V. Lundin, E. E. Zavarin, M. A. Sinitsyn, A. E. Nikolaev, E. Yu. Lundina, A. V. Sakharov, S. I. Troshkov & A. F. Tsatsul’nikov

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  1. W. V. Lundin
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  2. E. E. Zavarin
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  3. M. A. Sinitsyn
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  4. A. E. Nikolaev
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  5. E. Yu. Lundina
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  6. A. V. Sakharov
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  7. S. I. Troshkov
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  8. A. F. Tsatsul’nikov
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Correspondence to W. V. Lundin.

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Original Russian Text © W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, A.E. Nikolaev, E.Yu. Lundina, A.V. Sakharov, S.I. Troshkov, A.F. Tsatsul’nikov, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 21, pp. 39–45.

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Lundin, W.V., Zavarin, E.E., Sinitsyn, M.A. et al. InGaAlN heterostructures for LEDs grown on patterned sapphire substrates. Tech. Phys. Lett. 34, 924–926 (2008). https://doi.org/10.1134/S1063785008110072

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  • DOI: https://doi.org/10.1134/S1063785008110072

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