Skip to main content
SpringerLink
Log in

Bistability of hydrogen donors in proton-implanted GeSi alloy

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

Shallow hydrogen donors (H-donors) were formed in a Ge1 − x Si x (x = 0.012) alloy by the implantation of low-energy protons followed by heat treatment at 275°C The electrical properties of these donors have been studied using the method of capacitance-voltage characteristics. It is established that a certain fraction of the H-donors exhibit bistability, whereby their concentration changes reversibly when the sample temperature is cycled within 100–200°C. The properties of reversible H-donors in germanium are analogous to those of the bistable H-donors in silicon.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. J. Pearton, J. W. Sorbett, and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer, Berlin, 1992).

    Google Scholar 

  2. C. G. Van de Walle and J. Neugebauer, Ann. Rev. Mater. Res. 36, 179 (2006).

    Article  Google Scholar 

  3. T. Akatsua, C. Deguetb, L. Sanchezb, et al., Mater. Sci. Semicond. Process. 9, 444 (2006).

    Article  Google Scholar 

  4. H. G. Grimmeiss, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1032 (1999) [Semiconductors 33, 939 (1999)].

    Google Scholar 

  5. V. V. Kozlovskii, Proton Beam Modification of Semiconductors (Nauka, St. Petersburg, 2003).

    Google Scholar 

  6. B. N. Mukashev, Kh. A. Abdulin, and Yu. V. Gorelkinskiĭ, Usp. Fiz. Nauk 170, 143 (2000) [Phys. Usp. 43, 139 (2000)].

    Article  Google Scholar 

  7. Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, and V. G. Tsvyrko, Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 802 (2005) [Semiconductors 39, 768 (2005)].

    Google Scholar 

  8. Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, et al., Mater. Sci. Semicond. Process. 9, 629 (2006).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Belarussian State University, Minsk, 220050, Belarus

    Yu. M. Pokotilo, A. N. Petukh & V. V. Litvinov

  2. School of Electrical and Electronic Engineering, University of Manchester, Manchester, M60 1QD, UK

    V. P. Markevich & A. R. Peaker

  3. Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    N. V. Abrosimov

Authors
  1. Yu. M. Pokotilo
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. N. Petukh
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. V. Litvinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. P. Markevich
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. A. R. Peaker
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. V. Abrosimov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yu. M. Pokotilo.

Additional information

Original Russian Text © Yu.M. Pokotilo, A.N. Petukh, V.V. Litvinov, V.P. Markevich, A.R. Peaker, N.V. Abrosimov, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 12, pp. 1–5.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pokotilo, Y.M., Petukh, A.N., Litvinov, V.V. et al. Bistability of hydrogen donors in proton-implanted GeSi alloy. Tech. Phys. Lett. 34, 498–499 (2008). https://doi.org/10.1134/S106378500806014X

Download citation

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S106378500806014X

PACS numbers

Search

Navigation