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High-power semiconductor radiation sources based on 100-W diode laser bars for pumping solid-state lasers

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Abstract

High-power semiconductor radiation sources with a total optical output power of up to 5 kW and a power density of 400 W/cm2 have been developed, representing a vertical stack of quasi-continuous pulsed (500 μs) 100-W diode laser bars. Based on such sources, a solid-state laser with an output radiation energy of up to 150 mJ has been created, which is intended for information systems, laser radars, spectrum analyzers, etc.

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References

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Authors and Affiliations

  1. ATC-Semiconductor Devices Joint-Stock Company, St. Petersburg, Russia

    N. I. Katsavets, V. A. Buchenkov, M. O. Iskandarov, A. A. Nikitichev, É. G. Sokolov & A. L. Ter-Martirosyan

  2. Vavilov Optical Institute, State Scientific Center of the Russian Federation, St. Petersburg, Russia

    N. I. Katsavets, V. A. Buchenkov, M. O. Iskandarov, A. A. Nikitichev, É. G. Sokolov & A. L. Ter-Martirosyan

  3. State Research Institute of Semiconductor Devices (St. Petersburg Division), St. Petersburg, Russia

    N. I. Katsavets, V. A. Buchenkov, M. O. Iskandarov, A. A. Nikitichev, É. G. Sokolov & A. L. Ter-Martirosyan

Authors
  1. N. I. Katsavets
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  2. V. A. Buchenkov
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  3. M. O. Iskandarov
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  4. A. A. Nikitichev
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  5. É. G. Sokolov
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  6. A. L. Ter-Martirosyan
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Corresponding author

Correspondence to N. I. Katsavets.

Additional information

Original Russian Text © N.I. Katsavets, V.A. Buchenkov, M.O. Iskandarov, A.A. Nikitichev, É.G. Sokolov, A.L. Ter-Martirosyan, 2008, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2008, Vol. 34, No. 2, pp. 6–10.

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Katsavets, N.I., Buchenkov, V.A., Iskandarov, M.O. et al. High-power semiconductor radiation sources based on 100-W diode laser bars for pumping solid-state lasers. Tech. Phys. Lett. 34, 46–47 (2008). https://doi.org/10.1134/S1063785008010148

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  • DOI: https://doi.org/10.1134/S1063785008010148

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