Abstract
Epitaxial 3C-SiC films have been grown on 6H-SiC substrates by sublimation epitaxy in vacuum. The Hall effect in these heterostructures and their magnetoresistance have been measured in a temperature range from 1.4 to 300 K. At liquid-helium temperatures, the samples are characterized by low resistance and exhibit negative magnetoresistance in weak fields (∼1 T). Analysis of the experimental results suggests that the low resistance of samples is most probably due to the metal-insulator transition in the epitaxial 3C-SiC films.
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Original Russian Text © A.A. Lebedev, P.L. Abramov, N.V. Agrinskaya, V.I. Kozub, A.N. Kuznetsov, S.P. Lebedev, G.A. Oganesyan, L.M. Sorokin, A.V. Chernyaev, D.V. Shamshur, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 24, pp. 8–15.
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Lebedev, A.A., Abramov, P.L., Agrinskaya, N.V. et al. Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates. Tech. Phys. Lett. 33, 1035–1037 (2007). https://doi.org/10.1134/S1063785007120152
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DOI: https://doi.org/10.1134/S1063785007120152