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Growth of copper nanoislands on the Si(100)-c(4 × 12)-Al surface studied by scanning tunneling microscopy

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Abstract

The growth of copper island films on the Si(100)-c(4 × 12)-Al surface phase has been studied using scanning tunneling microscopy (STM). The dependence of the island concentration on their size and the substrate temperature is determined. The diffusion activation energy and the binding energy of copper dimers are determined from an analysis of the experimental STM data in terms of the kinetic theory of nucleation. The critical temperature corresponding to a change in the growth regime is evaluated from an Arrhenius plot. It is established that the c(4 × 12)-Al surface phase exhibits an orienting action on the crystalline structure of Cu nanoislands.

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Authors and Affiliations

  1. Institute of Automation and Control Processes, Far East Division, Russian Academy of Sciences, Vladivostok, 690041, Russia

    D. A. Olyanich, D. N. Chubenko, D. V. Gruznev, A. V. Zotov & A. A. Saranin

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  1. D. A. Olyanich
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  2. D. N. Chubenko
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  3. D. V. Gruznev
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  4. A. V. Zotov
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  5. A. A. Saranin
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Correspondence to D. A. Olyanich.

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Original Russian Text © D.A. Olyanich, D.N. Chubenko, D.V. Gruznev, A.V. Zotov, A.A. Saranin, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 21, pp. 31–36.

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Olyanich, D.A., Chubenko, D.N., Gruznev, D.V. et al. Growth of copper nanoislands on the Si(100)-c(4 × 12)-Al surface studied by scanning tunneling microscopy. Tech. Phys. Lett. 33, 912–914 (2007). https://doi.org/10.1134/S1063785007110053

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  • DOI: https://doi.org/10.1134/S1063785007110053

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