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Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

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Abstract

Epitaxial layers of p-type continuous solid solutions of the (Si2)1−x−y (Ge2) x (GaAs) y system (0 ≤ x ≤ 0.9, 0 ≤ y ≤ 0.92) have been grown by liquid phase epitaxy from a lead-based solution melt confined between two horizontal n-type single crystal silicon substrates. Depth-composition profiles of the solid solution layers have been obtained. The photosensitivity spectra of nSi-p(Si2)1−x−y (Ge2) x (GaAs) y structures have been measured.

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Authors and Affiliations

  1. Physicotechnical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

    A. S. Saidov, Sh. N. Usmonov, K. T. Kholikov & D. Saparov

Authors
  1. A. S. Saidov
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  2. Sh. N. Usmonov
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  3. K. T. Kholikov
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  4. D. Saparov
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Corresponding author

Correspondence to Sh. N. Usmonov.

Additional information

Original Russian Text © A.S. Saidov, Sh.N. Usmonov, K.T. Kholikov, D. Saparov, 2007, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2007, Vol. 33, No. 16, pp. 59–64.

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Saidov, A.S., Usmonov, S.N., Kholikov, K.T. et al. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions. Tech. Phys. Lett. 33, 701–703 (2007). https://doi.org/10.1134/S1063785007080238

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  • DOI: https://doi.org/10.1134/S1063785007080238

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