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Diagnostics of highly doped czochralski-grown silicon crystals

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Abstract

It is shown that effective diagnostics of strongly doped Czochralski-grown silicon single crystals in the initial (as-grown) state is provided by methods based on the interference phenomena of dynamic x-ray diffraction: the Lang section topography and the Borrmann effect diffractometry. The conditions of a test for the structural perfection of as-grown crystals, based on the observation of interference bands on the section topographs, are refined.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    R. N. Kyutt & I. L. Shulpina

  2. Sumimoto Mitsubishi Co., Oregon, 97302, USA

    S. S. Ruvimov

Authors
  1. R. N. Kyutt
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  2. S. S. Ruvimov
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  3. I. L. Shulpina
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Additional information

Original Russian Text © R.N. Kyutt, S.S. Ruvimov, I.L. Shulpina, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 24, pp. 79–87.

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Kyutt, R.N., Ruvimov, S.S. & Shulpina, I.L. Diagnostics of highly doped czochralski-grown silicon crystals. Tech. Phys. Lett. 32, 1079–1082 (2006). https://doi.org/10.1134/S106378500612025X

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  • DOI: https://doi.org/10.1134/S106378500612025X

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