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X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions

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Abstract

Features of formation and transformation of radiation defects in near-surface layers of silicon plates that are implanted with hydrogen ions are studied. Using the method of high-resolution double-crystal X-ray diffractometry, values of the main parameters, such as mean effective thickness Leff and mean relative deformation Δa/a of a doped layer, are determined depending on the implantation dose and substrate temperature.

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ACKNOWLEDGMENTS

We are grateful to N.V. Kuznetsov, Senior Researcher of Skobeltsyn Institute of Nuclear Physics, Moscow State University, for irradiation of samples on a KG-500 accelerator.

Funding

This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the State assignment of the Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences.

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Authors and Affiliations

  1. Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, 119333, Moscow, Russia

    V. E. Asadchikov, I. G. D’yachkova, D. A. Zolotov, Yu. S. Krivonosov & F. N. Chukhovskii

Authors
  1. V. E. Asadchikov
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  2. I. G. D’yachkova
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  3. D. A. Zolotov
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  4. Yu. S. Krivonosov
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  5. F. N. Chukhovskii
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Correspondence to V. E. Asadchikov.

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Translated by D. Churochkin

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Asadchikov, V.E., D’yachkova, I.G., Zolotov, D.A. et al. X-Ray Diagnostics of Microstructure Defects of Silicon Crystals Irradiated by Hydrogen Ions. Tech. Phys. 64, 680–685 (2019). https://doi.org/10.1134/S1063784219050049

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  • DOI: https://doi.org/10.1134/S1063784219050049

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