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Special features of the electrical characteristics of CdTe-based Schottky diodes with almost intrinsic conduction

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Abstract

The electrical properties of Schottky diodes obtained by vacuum deposition of Al on CdTe with weakly pronounced p-type conductivity (room-temperature ρ > 109 Ω cm) have been studied. The diodes exhibit nonrectifying, almost linear current-voltage (I-V) characteristics at bias voltages |V| < 3–5 V, whereas the photo emf amounts to 0.28–0.30 V, which is explained by specific features of the charge transfer mechanism related to a large resistance of the volume part of the diode structure. A decrease in this resistance as a result of irradiation (at photon energies corresponding to an appropriate absorption level) makes the I-V curve shape typical of semiconductor diodes. The results of calculations performed within the framework of the Sah-Noyce-Shockley theory agree with the experimental data.

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Authors and Affiliations

  1. Chernivtsy National University, Chernivtsy, Ukraine

    L. A. Kosyachenko, V. M. Sklyarchuk & O. L. Maslyanchuk

  2. Lashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    E. V. Grushko & V. A. Gnatyuk

  3. Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan

    T. Aoki

  4. Aichi University of Technology, Gamagouri, Aichi, 433 0047, Japan

    Y. Hatanaka

Authors
  1. L. A. Kosyachenko
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  2. V. M. Sklyarchuk
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  3. O. L. Maslyanchuk
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  4. E. V. Grushko
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  5. V. A. Gnatyuk
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  6. T. Aoki
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  7. Y. Hatanaka
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Additional information

Original Russian Text © L.A. Kosyachenko, V.M. Sklyarchuk, O.L. Maslyanchuk, E.V. Grushko, V.A. Gnatyuk, T. Aoki, Y. Hatanaka, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 24, pp. 29–37.

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Kosyachenko, L.A., Sklyarchuk, V.M., Maslyanchuk, O.L. et al. Special features of the electrical characteristics of CdTe-based Schottky diodes with almost intrinsic conduction. Tech. Phys. Lett. 32, 1056–1059 (2006). https://doi.org/10.1134/S1063785006120182

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  • DOI: https://doi.org/10.1134/S1063785006120182

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