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Molecular dynamics study of the diffusion barriers for silicon and carbon adatoms on a Si(111) surface

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Abstract

Barriers for the diffusion of silicon and carbon adatoms on an ideal (nonreconstructed) Si(111) surface and at silicon carbide (SiC) clusters of various sizes occurring on this surface have been determined using molecular dynamics simulations with a many-body Tersoff potential.

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Authors and Affiliations

  1. St. Petersburg Physicotechnical Research and Education Center, Russian Academy of Sciences, St. Petersburg, Russia

    V. S. Kharlamov, M. N. Lubov, E. E. Zhurkin & Yu. V. Trushin

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    V. S. Kharlamov, M. N. Lubov, E. E. Zhurkin & Yu. V. Trushin

  3. St. Petersburg State Technical University, St. Petersburg, 195251, Russia

    V. S. Kharlamov, M. N. Lubov, E. E. Zhurkin & Yu. V. Trushin

Authors
  1. V. S. Kharlamov
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  2. M. N. Lubov
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  3. E. E. Zhurkin
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  4. Yu. V. Trushin
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Additional information

Original Russian Text © V.S. Kharlamov, M.N. Lubov, E.E. Zhurkin, Yu.V. Trushin, 2006, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 32, No. 15, pp. 88–94.

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Kharlamov, V.S., Lubov, M.N., Zhurkin, E.E. et al. Molecular dynamics study of the diffusion barriers for silicon and carbon adatoms on a Si(111) surface. Tech. Phys. Lett. 32, 687–690 (2006). https://doi.org/10.1134/S1063785006080153

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  • DOI: https://doi.org/10.1134/S1063785006080153

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