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Tribological Studies of α-β-Ga2O3 Layers Paired with a Sapphire Counterface

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Abstract

The wear resistance of epitaxial layers of α- and β-polymorphs of gallium oxide grown on sapphire substrates has been considered. This is one of the first studies of the tribological properties of a promising wideband semiconductor crystal. As a result of tribotests conducted with the participation of a sapphire counterface in the process of dry friction in air, it has been shown that the layers of a metastable α-Ga2O3 are more resistant to abrasion than the layers of the thermostable β-phase. At the same time, the obtained values of the wear coefficients allow us to attribute both polymorphs to wear-resistant materials and especially α-Ga2O3 with a corundum structure. In addition, α- and β-Ga2O3 demonstrate extremely low values of friction coefficients: lower than those of sapphire.

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Notes

  1. Total wear, being a standard term, implies that the studied layer is completely destroyed (in this case, up to the substrate), but fragmentarily, that is, the layer is not absent over the entire area.

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ACKNOWLEDGMENTS

The authors thank O.E. Yakupov for the development of software using which the cross-sectional areas of the wear zone were determined.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    P. N. Butenko, L. I. Guzilova, A. V. Chikiryaka, A. I. Pechnikov & V. I. Nikolaev

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  1. P. N. Butenko
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  2. L. I. Guzilova
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  3. A. V. Chikiryaka
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  4. A. I. Pechnikov
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  5. V. I. Nikolaev
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Correspondence to P. N. Butenko.

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Translated by N. Petrov

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Butenko, P.N., Guzilova, L.I., Chikiryaka, A.V. et al. Tribological Studies of α-β-Ga2O3 Layers Paired with a Sapphire Counterface. Tech. Phys. 66, 1186–1193 (2021). https://doi.org/10.1134/S1063784221090048

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  • DOI: https://doi.org/10.1134/S1063784221090048

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