Abstract
Using the method of plasma oscillation dispersion, thin films of amorphous chalcogenide semiconductors have been investigated and the asymmetry in the number of electrons in the region of X-ray total external reflection and plasmon excitation has been calculated. Loop-shaped dispersion curves have been observed, and the mean energies of plasmons, together with plasmon-related internal stresses and film polarization, have been determined. It has been found that internal stresses and polarization in a molybdenum sulfide amorphous film are absent.
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This study was financially supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 3.5005.2017/VU.
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Translated by V. Isaakyan
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Stozharov, V.M. Dispersion of Plasma Oscillations in Amorphous Chalcogenide Semiconductors. Tech. Phys. 66, 938–941 (2021). https://doi.org/10.1134/S1063784221060189
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DOI: https://doi.org/10.1134/S1063784221060189