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Comparative Analysis of Crystal Growth on Earth and on a Space Station for CrSi2 Synthesized from Zn Melt in the Cr–Si–Zn System

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Abstract

We have analyzed crystal growth in “terrestrial” conditions and in conditions on a space station. It is shown that CrSi2 crystals grown from the Zn melt of the Cr–Si–Zn system in zero-gravity conditions exhibit an excess stress comparable with the excess pressure in the melt due to the support reaction on Earth, as well as the Laplace pressure.

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ACKNOWLEDGMENTS

X-ray diffraction measurements were performed using the equipment of the Federal Collective Usage Center Material Science and Diagnostics in Advanced Technologies (Ioffe Institute).

Funding

This study was supported in part by the Ministry of Education and Science of the Russian Federation (project identifier RFMEFI62117X0018) under research theme 9.7(0040-2014-0007).

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Authors and Affiliations

  1. Moscow State Regional University, 141014, Mytishchi, Moscow oblast, Russia

    E. V. Kalashnikov

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    E. V. Kalashnikov, V. N. Gurin, S. P. Nikanorov & V. I. Nikolaev

Authors
  1. E. V. Kalashnikov
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  2. V. N. Gurin
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  3. S. P. Nikanorov
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  4. V. I. Nikolaev
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Corresponding author

Correspondence to E. V. Kalashnikov.

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Translated by N. Wadhwa

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Kalashnikov, E.V., Gurin, V.N., Nikanorov, S.P. et al. Comparative Analysis of Crystal Growth on Earth and on a Space Station for CrSi2 Synthesized from Zn Melt in the Cr–Si–Zn System. Tech. Phys. 65, 199–204 (2020). https://doi.org/10.1134/S1063784220020061

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  • DOI: https://doi.org/10.1134/S1063784220020061

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