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Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films

  • PHYSICS OF LOW-DIMENSIONAL STRUCTURES
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Abstract

We have studied the effect of temperature and etching duration of the 4H-SiC (0001) surface in hydrogen on the structural perfection of graphene films grown by thermal destruction. Several technological modes have been identified that enable etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pregrowth etching in hydrogen at T = 1600°C with a duration of 1 min makes it possible to obtain a more uniform and structurally perfect graphene than etching at T = 1300°C with a 30 min duration.

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Funding

The study was supported by the Ministry of Science and Education of the Russian Federation (Agreement no. 14.575.21.0148, unique project no. RFMEFI57517X0148).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev & A. A. Lebedev

  2. St. Petersburg State Electrotechnical University LETI, 197376, St. Petersburg, Russia

    A. A. Lebedev

  3. ITMO University, 197101, St. Petersburg, Russia

    P. V. Bulat

Authors
  1. S. P. Lebedev
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  2. I. S. Barash
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  3. I. A. Eliseyev
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  4. P. A. Dementev
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  5. A. A. Lebedev
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  6. P. V. Bulat
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Corresponding author

Correspondence to S. P. Lebedev.

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The authors declare that they do not have any conflicts of interest.

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Translated by G. Dedkov

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Lebedev, S.P., Barash, I.S., Eliseyev, I.A. et al. Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films. Tech. Phys. 64, 1843–1849 (2019). https://doi.org/10.1134/S1063784219120144

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  • DOI: https://doi.org/10.1134/S1063784219120144

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