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Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers

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Abstract

The influence of the rotation frequency of a disk substrate holder on the growth mechanism and crystal structure characteristics of MOCVD-grown GaAs layers has been studied. In the frequency range of 0–400 rpm, variations have been observed in the growth mechanism and rate, as well as of crystal perfection.

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Authors and Affiliations

  1. Lobachevsky State University, pr. Gagarina 23, Nizhny Novgorod, 603950, Russia

    P. B. Boldyrevskii, D. O. Filatov, I. A. Kazantseva, M. V. Revin & D. S. Smotrin

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhny Novgorod, 603950, Russia

    P. A. Yunin

Authors
  1. P. B. Boldyrevskii
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  2. D. O. Filatov
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  3. I. A. Kazantseva
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  4. M. V. Revin
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  5. D. S. Smotrin
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  6. P. A. Yunin
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Corresponding author

Correspondence to P. B. Boldyrevskii.

Additional information

Original Russian Text © P.B. Boldyrevskii, D.O. Filatov, I.A. Kazantseva, M.V. Revin, D.S. Smotrin, P.A. Yunin, 2018, published in Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 63, No. 2, pp. 219–223.

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Boldyrevskii, P.B., Filatov, D.O., Kazantseva, I.A. et al. Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers. Tech. Phys. 63, 211–215 (2018). https://doi.org/10.1134/S1063784218020068

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  • DOI: https://doi.org/10.1134/S1063784218020068

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