Abstract
The temperature dependences of the dc conductivity and thermoelectric coefficient of TlGdS2 in the temperature interval of 77–373 K have been studied for the first time. It has been found that, at low temperatures (114–250 K), the compound has conductivity of the p-type and charge transfer in its energy gap follows the hopping mechanism. The main parameters of localized electronic states in the energy gap have been determined.
Similar content being viewed by others
References
S. N. Mustafaeva, M. M. Asadov, and E. M. Kerimova, Phys. Solid State 55, 2466 (2013).
S. N. Mustafaeva, E. M. Kerimova, and A. I. Gasanov, Acta Phys. Pol., A 128, 697 (2015).
S. N. Mustafaeva, M. M. Asadov, E. M. Kerimova, and N. Z. Gasanov, Inorg. Mater. 49, 1175 (2013).
S. N. Mustafaeva, A. M. Pashaev, and E. M. Kerimova, Azerb. J. Phys. 19 (2), 43 (2013).
S. N. Mustafaeva, M. M. Asadov, and D. T. Guseynov, Tech. Phys. 56, 139 (2011).
M. Duczmal, L. Pawlak, and S. Pokrzywnicki, Acta Phys. Pol., A 97, 839 (2000).
L. P. Pavlov, Methods for Measurement of Parameters of Semiconductor Materials (Vysshaya Shkola, Moscow, 1987).
A. T. Burkov, A. N. Fedotov, A. A. Kas’yanov, R. I. Panteleev, and T. Nakama, Nauchno-Tekh. Vestn. Inf. Tekhnol., Mekh. Opt. 15, 173 (2015).
N. F. Mott and E. A. Davis, Electronic Processes in Non- Crystalline Materials (Oxford Univ. Press, New York, 1971).
B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979).
B. V. Beznosikov and K. S. Aleksandrov, J. Struct. Chem. 50, 102 (2009).
R. Z. Sadykhov, M. D. Nadzhafzade, E. M. Kerimova, and M. A. Aldzhanov, Phys. Solid State 57, 320 (2015).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © S.N. Mustafaeva, S.M. Asadov, 2017, published in Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 87, No. 7, pp. 1061–1065.
Rights and permissions
About this article
Cite this article
Mustafaeva, S.N., Asadov, S.M. Charge transfer and thermopower in TlGdS2 . Tech. Phys. 62, 1077–1081 (2017). https://doi.org/10.1134/S1063784217070167
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063784217070167