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Dielectric properties and charge transfer in (TlInSe2)0.1(TlGaTe2)0.9 for the DC and AC current

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Abstract

The experimental results of studying the temperature and frequency dependences of dc and ac conductivity as well as the dispersion of dielectric coefficients of the grown single crystals of the (TlInSe2)0.1(TlGaTe2)0.9 solid solution are presented. The nature of dielectric losses and the hopping charge transfer mechanism have been established, and parameters of localized states, such as the density of states near the Fermi level and their spread, the average time and the hopping length of charge carriers, and the concentration of deep traps responsible for dc and ac conductivity, have been evaluated.

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan National Academy of Sciences, pr. H. Javid 131, Baku, AZ1143, Azerbaijan

    S. N. Mustafaeva & A. I. Dzhabbarov

  2. Institute of Chemical Problems named after M. F. Nagiyev, Azerbaijan National Academy of Sciences, pr. H. Javid 113, Baku, AZ1143, Azerbaijan

    M. M. Asadov

Authors
  1. S. N. Mustafaeva
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  2. M. M. Asadov
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  3. A. I. Dzhabbarov
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Correspondence to S. N. Mustafaeva.

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Original Russian Text © S.N. Mustafaeva, M.M. Asadov, A.I. Dzhabbarov, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 6, pp. 1055–1059.

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Mustafaeva, S.N., Asadov, M.M. & Dzhabbarov, A.I. Dielectric properties and charge transfer in (TlInSe2)0.1(TlGaTe2)0.9 for the DC and AC current. Phys. Solid State 56, 1096–1100 (2014). https://doi.org/10.1134/S1063783414060262

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  • DOI: https://doi.org/10.1134/S1063783414060262

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