Abstract
The effect of microwave irradiation (f = 2.45 GHz, 1.5 W/cm2, t = 1 or 2 min) on the reflectance and photoluminescence spectra of the epitaxial n-n +-GaAs and Au-n-n +-GaAs structures is studied. Short-term microwave irradiation is shown to cause long-term nonmonotonic changes in the spectral characteristics, which can result from the structure modification of the near-surface regions in the epitaxial films. The long-term changes of the optical spectra of the structures that occur after microwave irradiation are explained.
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Original Russian Text © N.S. Zayats, R.V. Konakova, V.V. Milenin, G.V. Milenin, R.A. Red’ko, S.N. Red’ko, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 3, pp. 114–118.
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Zayats, N.S., Konakova, R.V., Milenin, V.V. et al. Microwave-radiation-induced structural transformations in homo- and heterogeneous GaAs-based systems. Tech. Phys. 60, 432–436 (2015). https://doi.org/10.1134/S1063784215030299
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DOI: https://doi.org/10.1134/S1063784215030299