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Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperature

  • Surface, Electron and Ion Emission
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Abstract

The effect of high-temperature electron-stimulated desorption (ESD) from 20-nm-thick Al2O3 films deposited onto silicon wafers is studied. The ESD effect is found to be significantly enhanced upon heating. The films are found to decompose during ion beam irradiation of a heated substrate resulting in pure Al appearance. This process is accompanied by the formation of islands and almost pure silicon surface regions at a certain critical irradiation dose. Outside the irradiation zone, a 20-nm-thick Al2O3 film remains continuous even upon heating to 700°C and holding for 90 min. The effect of the primary electron beam energy on ESD from a 20-nm-thick Al2O3 film on silicon is investigated, and the parameters at which ESD takes place or absent are determined.

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Authors and Affiliations

  1. Institute of Automation and Control Processes, Far East Branch, Russian Academy of Sciences, ul. Radio 5, Vladivostok, 690041, Russia

    M. V. Ivanchenko, A. V. Nepomnyashchii & A. A. Saranin

  2. Far Eastern Federal University, ul. Sukhanova 8, Vladivostok, 690950, Russia

    M. V. Ivanchenko & A. A. Saranin

  3. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    V. A. Gritsenko

Authors
  1. M. V. Ivanchenko
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  2. V. A. Gritsenko
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  3. A. V. Nepomnyashchii
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  4. A. A. Saranin
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Correspondence to M. V. Ivanchenko.

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Original Russian Text © M.V. Ivanchenko, V.A. Gritsenko, A.V. Nepomnyashchii, A.A. Saranin, 2012, published in Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 82, No. 5, pp. 115–119.

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Ivanchenko, M.V., Gritsenko, V.A., Nepomnyashchii, A.V. et al. Enhancement of the electron-stimulated desorption from amorphous aluminum oxide films on silicon during an increase in the substrate temperature. Tech. Phys. 57, 693–696 (2012). https://doi.org/10.1134/S1063784212050155

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  • DOI: https://doi.org/10.1134/S1063784212050155

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