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Photoelectronic properties of organic films on the silicon surface

  • Surface, Electron and Ion Emission
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Abstract

The photoelectronic properties of organic semiconductor-silicon heterostructures (such as PTCDA-Si, CuPc-Si, and OPV-Si) are investigated. The I-V characteristics, as well as the spectral dependences of photoconductivity and photoinduced potential, are measured. Photosensitivity is observed in the absorption bands of both silicon and the organic films. A maximum potential (up to 0.25 V) is observed for the PTCDA-Si heterojunctions. In the OPV-Si heterojunction, the photoinduced potential changes sign under illumination at different wavelengths in the optical range.

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Authors and Affiliations

  1. Fok Institute of Physics (Petrodvorets branch), St. Petersburg State University, ul. Pervogo maya 100, St. Petersburg, 198904, Russia

    S. A. Komolov, N. B. Gerasimova, Yu. G. Alyaev, É. F. Lazneva, A. S. Komolov, B. A. Loginov & N. V. Potyupkin

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  1. S. A. Komolov
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  2. N. B. Gerasimova
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  3. Yu. G. Alyaev
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  4. É. F. Lazneva
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  5. A. S. Komolov
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  6. B. A. Loginov
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  7. N. V. Potyupkin
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Original Russian Text © S.A. Komolov, N.B. Gerasimova, Yu.G. Alyaev, É.F. Lazneva, A.S. Komolov, B.A. Loginov, N.V. Potyupkin, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 7, pp. 76–80.

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Komolov, S.A., Gerasimova, N.B., Alyaev, Y.G. et al. Photoelectronic properties of organic films on the silicon surface. Tech. Phys. 51, 894–897 (2006). https://doi.org/10.1134/S1063784206070139

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  • DOI: https://doi.org/10.1134/S1063784206070139

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