Abstract
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
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Original Russian Text © M.M. Loginova, V.A. Trofimov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 5, pp. 82–87.
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Loginova, M.M., Trofimov, V.A. Absorption coefficient versus induced electric field dependence as a basis for optical bistability in a semiconductor. Tech. Phys. 51, 615–619 (2006). https://doi.org/10.1134/S1063784206050124
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DOI: https://doi.org/10.1134/S1063784206050124