Skip to main content
SpringerLink
Log in

Switching characteristics of an MOSFET-controlled high-power integrated thyristor

  • Solid-State Electronics
  • Published:
Technical Physics Aims and scope Submit manuscript

Abstract

The basic stages of switching a high-power integrated thyristor controlled by an external MOSFET are analyzed qualitatively and quantitatively. The stage of switching delay is analyzed in terms of an analytical model the adequacy of which is verified by numerically calculating the current decay transient upon switching off the n + pnn’p +-structure. The effect of hyperdelay is discovered, which arises as the turned-off anode current approaches a limiting value depending on the parameters of the thyristor structure and control circuit. The specific energy losses are calculated, and it is shown that most losses are due to the current slow decay stage.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. V.A.K. Temple, IEEE Trans. Electron Devices 33, 1609 (1986).

    ADS  Google Scholar 

  2. F. Bauer, H. Hollenbeck, T. Stockmeier, and W. Fihtner, IEEE Electron Device Lett. 12, 297 (1991).

    Article  Google Scholar 

  3. B. J. Baliga, Power Semiconductor Devices (PWS, Boston, 1994).

    Google Scholar 

  4. Q. Huang, A. J. Amartunga, E. M. S. Narayaman, and W. I. Milne, IEEE Trans. Electron Devices 38, 1612 (1991).

    Article  Google Scholar 

  5. V. A. K. Temple, in Proceedings of the European Pulse Power Symposium, Saint Louis (France), 2002, pp. 19/1–19/3.

  6. Q. Huang, Report Prepared for Silicon Power Corporation by CPES Virginia Tech. (2001).

  7. I. V. Grekhov, T. T. Mnatsakanov, S. N. Yurkov, et al., Zh. Tekh. Fiz. 75(7), 80 (2005) [Tech. Phys. 50, 896 (2005)].

    Google Scholar 

  8. T. T. Mnatsakanov, I. L. Rostovtsev, and N. I. Philatov, Solid-State Electron. 30, 579 (1987).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    I. V. Grekhov & L. S. Kostina

  2. Lenin All-Russia Institute of Electrical Engineering, ul. Krasnokazarmennaya 12, Moscow, 111250, Russia

    S. N. Yurkov, T. T. Mnatsakanov & A. G. Tandoev

Authors
  1. I. V. Grekhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. N. Yurkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. T. Mnatsakanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. G. Tandoev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. L. S. Kostina
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © I.V. Grekhov, S.N. Yurkov, T.T. Mnatsakanov, A.G. Tandoev, L.S. Kostina, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 5, pp. 76–81.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Grekhov, I.V., Yurkov, S.N., Mnatsakanov, T.T. et al. Switching characteristics of an MOSFET-controlled high-power integrated thyristor. Tech. Phys. 51, 609–614 (2006). https://doi.org/10.1134/S1063784206050112

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063784206050112

PACS numbers

Search

Navigation