Abstract
The results of studying the switching capabilities of recently developed high-voltage integral pulse thyristors (HIPTs) with a working area of 0.45 cm2 and an operating voltage of 3 kV are presented. A silicon chip of a thyristor consists of a large number of microthyristor cells that are enabled strictly synchronously with a control-current pulse, thus providing low switching energy losses and allowing a current of up to 8 kA at a pulse duration of 1.5 μs to be switched within 500 ns in a single-pulse mode. The HIPT switching-off time is several microseconds when, after a power-current pulse terminates, a field-effect transistor with a low (tens of milliohms) channel resistance closes the emitter–base circuit. The low switching energy loss and the short switching-off time made it possible to use HIPTs in the mode of switching current pulses with an amplitude of 500 А at a frequency of 50 kHz.
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Grekhov, I.V., Zhmodikov, A.L., and Korotkov, S.V., Instrum. Exp. Tech., 2015, vol. 58, no. 1, p. 67. doi 10.7868/S0032816215010292
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Original Russian Text © I.V. Grekhov, A.L. Zhmodikov, S.V. Korotkov, S.G. Prizhimnov, Yu.L. Fomenko, 2016, published in Pribory i Tekhnika Eksperimenta, 2016, No. 3, pp. 32–36.
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Grekhov, I.V., Zhmodikov, A.L., Korotkov, S.V. et al. Investigation of high-voltage integral pulse thyristors in single-pulse and pulse-train modes. Instrum Exp Tech 59, 351–355 (2016). https://doi.org/10.1134/S0020441216020202
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DOI: https://doi.org/10.1134/S0020441216020202