Abstract
The electrical properties of the Ag0.01Mn0.99S and Tm0.01Mn0.99S semiconductor compounds and the Hall effect in them have been investigated in the temperature range of 80–400 K in a magnetic field of 12 kOe. Using the I–V characteristics, the conductivity mechanism depending on the doping type and concentration has been established. Upon substitution of silver for manganese, the Mott-type conductivity has been found, while substitution of thulium causes the ohmic conductivity. The mobility and type of carriers have been determined from the Hall constant data.
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This study was supported by the Russian Foundation for Basic Research and the Belarusian Republican Foundation for Basic Research, project no. 20-52-00005.
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Romanova, O.B., Aplesnin, S.S. & Udod, L.V. Effect of Electron and Hole Doping on the Transport Characteristics of Chalcogenide Systems. Phys. Solid State 63, 754–757 (2021). https://doi.org/10.1134/S1063783421050152
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DOI: https://doi.org/10.1134/S1063783421050152