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Resistive Switching and Memory Effects in Composite Films Based on Graphene Oxide in a Matrix of Organometallic Perovskites

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Abstract

The resistive switching effect is studied in composite films based on organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 with graphene oxide (GO) particles with concentration 1–3 wt % and a layer of [60]PCBM fullerene. It is found that the resistive switching effect in Ag/[60]PCBM/CH3NH3PbBr3(I3): GO/PEDOT:PSS/ITO/glass films is observed as a sharp change from a low-conductivity state to high-conductivity state as both positive and negative biases are applied to Ag and ITO electrodes in the darkness and during illumination by a sunlight imitator. The resistive switching mechanism is assumed to be related to the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes. The composite films studied in this work are promising for the creation of non-volatile memory cells.

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ACKNOWLEDGMENTS

The authors are grateful to I.N. Trapeznikova for assistance and the measurements of the absorption spectra.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    A. V. Arkhipov, G. V. Nenashev & A. N. Aleshin

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  1. A. V. Arkhipov
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  2. G. V. Nenashev
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  3. A. N. Aleshin
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Correspondence to A. N. Aleshin.

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Translated by Yu. Ryzhkov

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Arkhipov, A.V., Nenashev, G.V. & Aleshin, A.N. Resistive Switching and Memory Effects in Composite Films Based on Graphene Oxide in a Matrix of Organometallic Perovskites. Phys. Solid State 63, 525–529 (2021). https://doi.org/10.1134/S1063783421040041

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