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High performance resistive switching memory organic films prepared through PPy growing on graphene oxide substrate

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Abstract

In this study, the photochemical polymerization using graphene oxide (GO) as initiator generates a new composite film with polypyrrole (PPy) covering the GO nanosheets. The specular reflection infrared spectroscopy reveals the continuous upload of the conjugated polymers. Structures of the as-synthesized films are studied by using Raman and X-ray photoelectron spectroscopy with the aim of gaining an insight into the interface. The electronic properties of the composite films are investigated using solid-phase ultraviolet photoelectron spectroscopy. Fabricated from the synthesized film, the ITO/GO–PPy/Al device exhibits a nonvolatile rewritable memory with a reversible bistable resistance switching and the turn on voltage of 1.7 V. The ON/OFF current ratio reaches 105. Analyzing the current–voltage characteristics indicates that the ON-state charge transport follows Ohmic conduction, and the OFF-state charge transport is dominated by trap-limited space charge limited conduction.

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Acknowledgments

This study was funded by the Science and Technology Commission of Shanghai Municipality (STCSM) under Grant No. 13DZ1108904.

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Authors and Affiliations

  1. State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, People’s Republic of China

    Yongming Li & Xiuyuan Ni

  2. State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, 200433, People’s Republic of China

    Shijin Ding

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  1. Yongming Li
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  2. Xiuyuan Ni
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Correspondence to Xiuyuan Ni.

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Li, Y., Ni, X. & Ding, S. High performance resistive switching memory organic films prepared through PPy growing on graphene oxide substrate. J Mater Sci: Mater Electron 26, 9001–9009 (2015). https://doi.org/10.1007/s10854-015-3583-1

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