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Investigation of Thermoelectric Power of CuInGaTe2 Single Crystals

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Abstract

Thermoelectric power values of CuInGaTe2 (CIGT) single crystals were estimated without precedent for a wide temperature range. An authorial unique design dependent on Bridgman procedure for crystal growth from the melt has been utilized to prepare our sample. The single crystals show a p-type conductivity within the full range of temperature. Experimental examination has been made of the variety of electrical conductivity and thermoelectric power with CIGT single crystals. The holes and electrons effective masses, the mobilities of the electrons and holes, and the diffusion length of the majority and minority carriers were determined at room temperature. The electron and hole diffusion coefficients in CIGT single crystals are Dn = 7.938 m2/s and Dp = 7.365 m2/s, respectively. Additionally, the holes and electrons relaxation times were derived from the mobilities. These outcomes give us a complete and clear picture for the main physical parameters essential for the industrial applications.

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REFERENCES

  1. W. E. Devaney, R. A. Mickelson, and W. S. Chen, in Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, NV,1985, p. 1733.

  2. J. Loferski, J. Sewchun, B. Roesler, R. Beaulieu, J. Plekoszeski, M. Gorska, and G. Chapman, in Proceedings of the 13th IEEE Photovoltaic Specialists Conference,1978, p. 190.

  3. L. L. Kazmerski, M. Hallerdt, P. J. Ireland, R. A. Mickelson, and W. S. Chen, J. Vac. Sci. Technol. A 1, 395 (1983).

    Article  ADS  Google Scholar 

  4. V. F. Gremenok, I. V. Bodnar, I. A. Victorov, D. D. Kryvalap, A. E. Hill, M. V. Yakushev, R. D. Pilhington, and R. D. Tomlinson, in Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain,1997, p. 2161.

  5. C. Vinothini, IJETCAS 15–751 (2015).

  6. J. L. Shay and J. H. Wernik, Ternary Chalcopyrite Semiconductors (Pergamon, New York, 1975).

    Google Scholar 

  7. S. A. Hussein and A. T. Nagat, Cryst. Res. Technol. 24, 283 (1989).

    Article  Google Scholar 

  8. A. T. Nagat, S. A. Hussein, Y. H. Gameel, and A. E. Belal, Egypt. J. Solids 10, 45 (1988).

    Google Scholar 

  9. T. Plirdpring, K. Kurosaki, A. Kosuga, T. Day, S. Firdosy, V. Ravi, G. J. Snyder, A. Harnwunggmoung, T. Sugahara, Y. Ohishi, H. Muta, and S. Yamanaka, Adv. Mater. 24, 3622 (2012).

    Article  Google Scholar 

  10. Y. Li, Q. Meng, Y. Deng, H. Zhou, Y. Gao, Y. Li, J. Yang, and J. Cui, Appl. Phys. Lett. 100, 231903 (2012).

    Article  ADS  Google Scholar 

  11. L. Xu, Y. Liu, B. Chen, C. Zhao, and K. Lu, Polym. Compos. 34, 1728 (2013).

    Article  Google Scholar 

  12. A. Salem, A. S. Salwa, S. A. Hussein, and M. Ezzeldien, J. Laser Opt. Photon. 5, 183 (2018).

    Google Scholar 

  13. S. A. Hussein, M. M. Nassary, G. A. Gamal, and A. T. Nagat, Cryst. Res. Technol. 28, 1021 (1993).

    Article  Google Scholar 

  14. G. A. Gamal and M. M. Nassary, Cryst. Res. Technol. 31, 315 (1996).

    Article  Google Scholar 

  15. J. Lauc, J. Phys. Rev. 95, 1394 (1954).

    Article  ADS  Google Scholar 

  16. M. M. Nassary, Turk. J. Phys. 33, 201 (2009).

    Google Scholar 

  17. P. H. E. Schmid and E. Mooser, Helv. Phys. Acta 45, 870 (1972).

    Google Scholar 

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This research received no specific grant from any funding agency in the public, commercial, or not-for-profit sectors.

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Authors and Affiliations

  1. Solid State Lab., Physics Department, Faculty of Science, South Valley University, Qena, Egypt

    A. Salem, S. A. Hussein & A. S. Salwa

  2. Physics Department, Umm Al-Qura University College in Qunfudah-Female, Al Qunfudhah, Saudi Arabia

    J. A. M. Abdulwahed

  3. Faculty of Art And Science, Al Jouf University, Al-Jouf, Saudi Arabia

    A. S. Salwa

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  1. A. Salem
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  2. J. A. M. Abdulwahed
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  3. S. A. Hussein
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  4. A. S. Salwa
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Correspondence to A. Salem.

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Salem, A., Abdulwahed, J.A., Hussein, S.A. et al. Investigation of Thermoelectric Power of CuInGaTe2 Single Crystals. Phys. Solid State 62, 116–119 (2020). https://doi.org/10.1134/S106378342001028X

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  • DOI: https://doi.org/10.1134/S106378342001028X

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