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Anisotropic Carrier Transport in n-Doped 6H-SiC

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Abstract

In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the c-axis) of the basic macrovariables: the “electron drift velocity” and the “nonequilibrium temperature.” The “peak points” in time evolution of this macrovariables are derived and analyzed.

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Authors and Affiliations

  1. School of Exact Sciences and Computing, Pontifical Catholic University, Goiás, Brazil

    R. T. Ferracioli & C. G. Rodrigues

  2. Condensed Matter Physics Department, Institute of Physics Gleb Wataghin, Campinas, Brazil

    R. Luzzi

Authors
  1. R. T. Ferracioli
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  2. C. G. Rodrigues
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  3. R. Luzzi
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Correspondence to C. G. Rodrigues.

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Ferracioli, R.T., Rodrigues, C.G. & Luzzi, R. Anisotropic Carrier Transport in n-Doped 6H-SiC. Phys. Solid State 62, 110–115 (2020). https://doi.org/10.1134/S1063783420010102

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