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Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films

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Abstract

In this paper, we present the results of experimental studies of the frequency and temperature dependences of the electrical conductivity of metal–dielectric–semiconductor structures based on ferroelectric films of the Ba0.8Sr0.2TiO3 composition. In the temperature range of 290–400 K and the frequency range of 25–106 Hz, the conductivity was found to obey the σ ∝ f 0.76 law, which is characteristic of the hopping mechanism of charge transfer over states localized near the Fermi level. The density of these states, average distance and time of jumps are estimated.

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Funding

The work was performed as part of a state assignment.

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Authors and Affiliations

  1. Fryazino Branch of Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 141190, Fryazino, Russia

    M. S. Afanasiev, E. I. Goldman & G. V. Chucheva

  2. Azerbaijan State Pedagogical University, AZ1000, Baku, Azerbaijan

    A. E. Nabiev & J. I. Huseinov

  3. Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, AZ1143, Baku, Azerbaijan

    N. Sh. Aliev

Authors
  1. M. S. Afanasiev
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  2. E. I. Goldman
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  3. G. V. Chucheva
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  4. A. E. Nabiev
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  5. J. I. Huseinov
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  6. N. Sh. Aliev
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Corresponding author

Correspondence to G. V. Chucheva.

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The authors declare that they have no conflicts of interest.

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Translated by A. Ivanov

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Afanasiev, M.S., Goldman, E.I., Chucheva, G.V. et al. Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films. Phys. Solid State 62, 164–167 (2020). https://doi.org/10.1134/S1063783420010035

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  • DOI: https://doi.org/10.1134/S1063783420010035

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