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Energy Structure of an Individual Mn Acceptor in GaAs : Mn

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Abstract

The energy structure of the Mn acceptor, which is a complex of Mn2+ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn2+ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. S. Dimitriev, I. V. Krainov, V. F. Sapega & N. S. Averkiev

  2. Lappeenranta University of Technology, Lappeenranta, Finland

    I. V. Krainov & E. Lähderanta

  3. Experimentelle Physik 2, Technische Universität Dortmund, Dortmund, Germany

    J. Debus

Authors
  1. G. S. Dimitriev
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  2. I. V. Krainov
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  3. V. F. Sapega
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  4. N. S. Averkiev
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  5. J. Debus
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  6. E. Lähderanta
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Correspondence to G. S. Dimitriev.

Additional information

Original Russian Text © G.S. Dimitriev, I.V. Krainov, V.F. Sapega, N.S. Averkiev, J. Debus, E. Lähderanta, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 8, pp. 1556–1565.

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Dimitriev, G.S., Krainov, I.V., Sapega, V.F. et al. Energy Structure of an Individual Mn Acceptor in GaAs : Mn. Phys. Solid State 60, 1568–1577 (2018). https://doi.org/10.1134/S106378341808005X

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