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Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

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Abstract

The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.

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Authors and Affiliations

  1. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov & E. V. Osipova

  2. St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

    S. A. Kukushkin

  3. ITMO University, St. Petersburg, 197101, Russia

    S. A. Kukushkin & A. V. Osipov

  4. St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. A. Kukushkin, A. V. Osipov & I. P. Soshnikov

  5. OOO Sovershennye Kristally, St. Petersburg, 194064, Russia

    V. I. Nikolaev

  6. Ioffe Institute, St. Petersburg, 194021, Russia

    V. I. Nikolaev

Authors
  1. A. S. Grashchenko
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  2. S. A. Kukushkin
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  3. V. I. Nikolaev
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  4. A. V. Osipov
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  5. E. V. Osipova
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  6. I. P. Soshnikov
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Corresponding author

Correspondence to S. A. Kukushkin.

Additional information

Original Russian Text © A.S. Grashchenko, S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, E.V. Osipova, I.P. Soshnikov, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 5, pp. 851–856.

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Grashchenko, A.S., Kukushkin, S.A., Nikolaev, V.I. et al. Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates. Phys. Solid State 60, 852–857 (2018). https://doi.org/10.1134/S1063783418050104

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  • DOI: https://doi.org/10.1134/S1063783418050104

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