Abstract
Structural and mechanical properties of gallium oxide films grown on (001), (011) and (111) silicon substrates with a buffer layer of silicon carbide are studied. The buffer layer was fabricated by the atom substitution method, i.e., one silicon atom per unit cell in the substrate was substituted by a carbon atom by chemical reaction with carbon monoxide. The surface and bulk structure properties of gallium oxide films have been studied by atomic-force microscopy and scanning electron microscopy. The nanoindentation method was used to investigate the elastoplastic characteristics of gallium oxide, and also to determine the elastic recovery parameter of the films under study. The ultimate tensile strength, hardness, elastic stiffness constants, elastic compliance constants, Young’s modulus, linear compressibility, shear modulus, Poisson’s ratio and other characteristics of gallium oxide have been calculated by quantum chemistry methods based on the PBESOL functional. It is shown that all these properties of gallium oxide are essentially anisotropic. The calculated values are compared with experimental data. We conclude that a change in the silicon orientation leads to a significant reorientation of gallium oxide.
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Communicated by Francesco dell’Isola.
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Osipov, A.V., Grashchenko, A.S., Kukushkin, S.A. et al. Structural and elastoplastic properties of \(\upbeta \)-\(\hbox {Ga}_{2}\hbox {O}_{3}\) films grown on hybrid SiC/Si substrates. Continuum Mech. Thermodyn. 30, 1059–1068 (2018). https://doi.org/10.1007/s00161-018-0662-6
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DOI: https://doi.org/10.1007/s00161-018-0662-6