Abstract
The results of examination of the electronic structure of the conduction band of naphthalenedicarboxylic anhydride (NDCA) films in the process of their deposition on the surface of oxidized silicon are presented. These results were obtained using total current spectroscopy (TCS) in the energy range from 5 to 20 eV above the Fermi level. The energy position of the primary maxima of the density of unoccupied states (DOUS) of an NDCA film was determined based on the experimental TCS data and calculated data and compared with the position of the DOUS maxima of a naphthalenetetracarboxylic dianhydride (NTCDA) film. The theoretical analysis involved calculating the energies and the spatial distribution of orbitals of the molecules under study at the B3LYP/6-31G(d) DFT (density functional theory) level and correcting the obtained energies in accordance with the procedure that was proven effective in earlier studies of the conduction band of films of small conjugated organic molecules. It was found that the DOUS maxima of the NTCDA film in the studied energy interval from 5 to 20 eV above the Fermi level are shifted toward lower electron energies by 1–2 eV relative to the corresponding DOUS maxima of the NDCA film Subdivision of the Ufa Federal Research Centre of the.
Similar content being viewed by others
References
P. A. Troshin, D. K. Susarova, E. A. Khakina, A. A. Goryachev, O. V. Borshchev, S. A. Ponomarenko, V. F. Razumov, and N. Serdar Sariciftci, J. Mater. Chem. 22, 18433 (2012).
M. Gruenewald, L. K. Schirra, P. Winget, M. Kozlik, P. F. Ndione, A. K. Sigdel, J. J. Berry, R. Forker, J.-L. Brédas, T. Fritz, and O. L. A. Monti, J. Phys. Chem. C 119, 4865 (2015).
A. N. Aleshin, I. P. Shcherbakov, A. S. Komolov, V. N. Petrov, and I. N. Trapeznikova, Org. Electron. 16, 186 (2015).
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, A. V. Baramygin, and G. D. Zashikhin, Phys. Solid State 58, 1257 (2016).
J. L. Bredas and A. J. Heeger, Chem. Phys. Lett. 217, 507 (1994).
R. Tonner, P. Rosenowa, and P. Jakob, Phys. Chem. Chem. Phys. 18, 6316 (2016).
A. S. Komolov, E. F. Lazneva, and S. N. Akhremtchik, Appl. Surf. Sci. 256, 2419 (2010).
I. S. Yahia, H. Y. Zahran, and F. H. Alamri, Synth. Met. 222, 186 (2016).
C. Farley, N. V. S. D. K. Bhupathiraju, B. K. John, and C. M. Drain, J. Phys. Chem. A 120, 7451 (2016).
B. Handke, L. Klita, J. Niziol, W. Jastrzebski, and A. Adamczyk, J. Mol. Struct. 1065–1066, 248 (2014).
B. Handke, L. Klita, and W. Niemiec, Surf. Sci. (2017). doi 10.1016/j.susc.2017.08.23
L. Grzadziel, M. Krzywiecki, H. Peisert, T. Chassé, and J. Szuber, Org. Electron. 13, 1873 (2012).
I. A. Averin, A. A. Karmanov, V. A. Moshnikov, I. A. Pronin, S. E. Igoshina, A. P. Sigaev, and E. I. Terukov, Phys. Solid State 57, 2373 (2015).
M. Krzywiecki, L. Grzadziel, A. Sarfraz, D. Iqbal, A. Szwajca, and A. Erbe, Phys. Chem. Chem. Phys. 17, 10004 (2015).
I. B. Olenych, O. I. Aksimentyeva, L. S. Monastyrskii, Y. Y. Horbenko, M. V. Partyka, A. P. Luchechko, and L. I. Yarytska, Nanoscale Res. Lett. 11, 43 (2016).
A. S. Komolov, Y. M. Zhukov, E. F. Lazneva, A. N. Aleshin, S. A. Pshenichnuk, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, and A. V. Baramygin, Mater. Des. 113, 319 (2017).
C. K. Chan, E. G. Kim, J. L. Bredas, and A. Kahn, Adv. Funct. Mater. 16, 831 (2006).
J. Taborski, P. Vaterlein, U. Zimmermann, and E. Umbach, J. Electron. Spectrosc. Rel. Phenom. 75, 129 (1995).
I. G. Hill, J. Schwartz, and A. Kahn, Org. Electron. 1, 5 (2000).
D. Ozdal, N. P. Aydinlik, J. B. Bodapati, and H. Icil, Photochem. Photobiol. Sci. 16, 262 (2017).
F. Wurthner, C. Thalacker, S. Diele, and C. Tschierske, Chem. Eur. J. 7, 2245 (2001).
A. S. Komolov, P. J. Moller, Y. G. Aliaev, E. F. Lazneva, S. Akhremtchik, F. S. Kamounah, J. Mortenson, and K. Schaumburg, J. Mol. Struct. 744–747, 145 (2005).
A. S. Komolov, E. F. Lazneva, S. N. Akhremtchik, N. S. Chepilko, and A. A. Gavrikov, J. Phys. Chem. C 117, 12633 (2013).
S. A. Pshenichnyuk and A. S. Komolov, J. Phys. Chem. A 116, 761 (2012).
S. A. Pshenichnyuk, A. V. Kukhto, I. N. Kukhto, and A. S. Komolov, Tech. Phys. 56, 754 (2011).
S. Heutz, A. J. Ferguson, G. Rumbles, and T. S. Jones, Org. Electron. 3, 119 (2002).
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, A. V. Baramygin, G. D. Zashikhin, and S. A. Pshenichnyuk, Phys. Solid State 59, 403 (2017).
I. Bartos, Prog. Surf. Sci. 59, 197 (1998).
A. D. Becke, J. Chem. Phys. 98, 5648 (1993).
M. J. Frisch, G. W. Trucks, H. B. Schlegel, G. E. Scuseria, M. A. Robb, J. R. Cheeseman, G. Scalmani, V. Barone, B. Mennucci, G. A. Petersson, et al., Gaussian 09, Revision D.01 (Gaussian Inc., Wallingford, CT, 2009).
P. D. Burrow and A. Modelli, SAR QSAR Environ. Res. 24, 647 (2013).
A. M. Scheer and P. D. Burrow, J. Phys. Chem. B 110, 17751 (2006).
N. L. Asfandiarov, S. A. Pshenichnyuk, A. S. Vorob’ev, E. P. Nafikova, and A. Modelli, Rapid Commun. Mass Spectrom. 29, 910 (2015).
A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, G. D. Zashikhin, A. V. Baramygin, P. Si, S. N. Akhremtchik, and A. A. Gavrikov, J. Electron Spectrosc. Rel. Phenom. 205, 52 (2015).
T. Graber, F. Forster, A. Schoell, and F. Reinert, Surf. Sci. 605, 878 (2011).
T. Maruyama, A. Hirasawa, T. Shindow, K. Akimoto, H. Kato, and A. Kakizaki, J. Lumin. 87–89, 782 (2000).
A. P. Hitchcock, P. Fischer, A. Gedanken, and M. B. Robin, J. Phys. Chem. 91, 531 (1987).
J. G. Chen, Surf. Sci Rep. 30, 1 (1997).
A. Schoell, Y. Zou, D. Huebner, S. G. Urquhart, T. Schmidt, R. Fink, and E. Umbach, J. Chem. Phys. 123, 044509 (2005).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.S. Komolov, E.F. Lazneva, N.B. Gerasimova, Yu.A. Panina, A.V. Baramygin, G.D. Zashikhin, S.A. Pshenichnyuk, 2018, published in Fizika Tverdogo Tela, 2018, Vol. 60, No. 4, pp. 799–804.
Rights and permissions
About this article
Cite this article
Komolov, A.S., Lazneva, E.F., Gerasimova, N.B. et al. Density of Electronic States in the Conduction Band of Ultrathin Films of Naphthalenedicarboxylic Anhydride and Naphthalenetetracarboxylic Dianhydride on the Surface of Oxidized Silicon. Phys. Solid State 60, 804–808 (2018). https://doi.org/10.1134/S1063783418040169
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783418040169