Abstract
The dislocation mechanism of solid solution strengthening of covalent semiconductor crystals has been studied. The change in the regularities of dislocation dynamics in solid solutions from those in the components of the solution is connected with the manifestation of the nonlinear drift of dislocation kinks. The theory developed suggests an explanation of specificities of the dislocation mobility in a Ge1–c Si c solid solution.
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Original Russian Text © B.V. Petukhov, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 9, pp. 1764–1768.
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Petukhov, B.V. Dislocation dynamics in solid solutions of covalent crystals. Phys. Solid State 58, 1826–1830 (2016). https://doi.org/10.1134/S1063783416090262
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DOI: https://doi.org/10.1134/S1063783416090262