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Formation of the conduction band electronic structure during deposition of ultrathin dicarboximide-substituted perylene films on the oxidized silicon surface

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Abstract

The results of the investigation of the conduction band electronic structure and the interfacial potential barrier during deposition of ultrathin dicarboximide-substituted perylene films (PTCBI-C8) on the oxidized silicon surface have been presented. The measurements have been performed using the very low energy electron diffraction (VLEED) technique implemented in the total current spectroscopy (TCS) mode with a variation in the incident electron energy from 0 to 25 eV. Changes in the intensities of the maxima from the deposited PTCBI-C8 film and from the substrate with an increase in the organic coating thickness to 7 nm have been analyzed using TCS measurements. A comparison of the structure of the maxima of PTCBI-C8 and perylene-tetracarboxylic-dianhydride (PTCDA) films has made it possible to distinguish the energy range (8–13 eV above E F) in which distinct differences in the structures of maxima for PTCDA and PTCBI-C8 films are observed. This energy range corresponds to low-lying σ*-states of the conduction band of the films studied. The formation of the interfacial region of the PTCBI-C8 film and (SiO2)n-Si substrate is accompanied by an increase in the surface work function by 0.6 eV, which corresponds to the electron density charge transfer from the (SiO2)n-Si substrate to the PTCBI-C8 film.

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Authors and Affiliations

  1. St. Petersburg State University, Universitetskaya nab. 7-9, St. Petersburg, 199034, Russia

    A. S. Komolov, E. F. Lazneva, N. B. Gerasimova, Yu. A. Panina, A. V. Baramygin & A. D. Ovsyannikov

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  1. A. S. Komolov
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  2. E. F. Lazneva
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  3. N. B. Gerasimova
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  4. Yu. A. Panina
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  5. A. V. Baramygin
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  6. A. D. Ovsyannikov
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Correspondence to A. S. Komolov.

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Original Russian Text © A.S. Komolov, E.F. Lazneva, N.B. Gerasimova, Yu.A. Panina, A.V. Baramygin, A.D. Ovsyannikov, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 7, pp. 1445–1449.

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Komolov, A.S., Lazneva, E.F., Gerasimova, N.B. et al. Formation of the conduction band electronic structure during deposition of ultrathin dicarboximide-substituted perylene films on the oxidized silicon surface. Phys. Solid State 57, 1472–1476 (2015). https://doi.org/10.1134/S1063783415070173

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