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Dependence of the spectra of charge carriers on the concentration of defects in silver telluride

  • Semiconductors
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Abstract

A change in the band gap as a function of the concentration of electrically active defects in silver telluride has been considered. It has been found that the electronegative and electropositive defects lead to an increase and a decrease in the band gap \(\varepsilon _{g_0 } \), respectively. It has been revealed that, in Ag2Te with Te concentrations of higher than or equal to 0.75 at %, the band gap \(\varepsilon _{g_0 } \) has an unusually low value (∼0.008 eV). In the case where the band gap is characterized by the temperature dependence ɛ g = (0.008−7 × 10−5 T) eV, at T > 100 K, there is a gapless state. Owing to the changes in the concentration of electrically active defects, silver telluride can exhibit n- and p-type conductivities, unlike other silver chalcogenides (Ag2S and Ag2Se).

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Authors and Affiliations

  1. Institute of Physics, Azerbaijan National Academy of Sciences, pr. H. Javid 33, Baku, AZ1141, Azerbaijan

    F. F. Aliev & V. I. Eminova

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  1. F. F. Aliev
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  2. V. I. Eminova
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Correspondence to F. F. Aliev.

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Original Russian Text © F.F. Aliev, V.I. Eminova, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 7, pp. 1301–1308.

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Aliev, F.F., Eminova, V.I. Dependence of the spectra of charge carriers on the concentration of defects in silver telluride. Phys. Solid State 57, 1325–1333 (2015). https://doi.org/10.1134/S1063783415070033

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