Abstract
A method has been proposed using the example of an AlN/SiC/Si heterostructure according to which the strain state induced in multilayer epitaxial films by the mismatch in the lattice parameters and thermal expansion coefficients of the crystals can be calculated from the experimental temperature dependence of the curvature of the crystal plate. The method makes it possible to estimate the imperfection of the hetero-structure from defect-relieved mechanical stresses caused by mismatch strains. It has been found that there are specific features in the formation of the relief of AlN films grown on SiC/Si substrates prepared by the atomic substitution. Criteria for the formation and preferred orientations of defects (dislocations, cracks, delaminations, and buckles) in AlN films have been calculated. For this purpose, the surface energies and energies of adhesion for different twins at the semiconductor interfaces have been calculated using computational quantum chemistry methods for different crystal faces.
Similar content being viewed by others
References
H. Morkoç, Handbook of Nitride Semiconductors and Devices (Wiley, Weinheim, 2008), Vols. 1–3.
S. A. Kukushkin, A. V. Osipov, V. N. Bessolov, B. K. Medvedev, V. K. Nevolin, and K. A. Tcarik, Rev. Adv. Mater. Sci. 17(1–2), 1 (2008).
S. A. Kukushkin and A. V. Osipov, Phys. Solid State 50(7), 1238 (2008).
S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, Phys. Solid State 56(8), 1507 (2014).
S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).
V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, L. M. Sorokin, N. A. Feoktistov, Sh. Sharofidinov, M. P. Shcheglov, S. A. Kukushkin, L. I. Mets, and A. V. Osipov, Tech. Phys. Lett. 36(6), 496 (2010).
L. M. Sorokin, A. E. Kalmykov, V. N. Bessolov, N. A. Feoktistov, A. V. Osipov, S. A. Kukushkin, and V. N. Veselov, Tech. Phys. Lett. 37(4), 326 (2011).
Ya. E. Geguzin, Diffusion Zone (Nauka, Moscow, 1979), p. 286 [in Russian].
W. M. Yim and R. J. Paff, J. App. Phys. 45, 1456 (1974).
Z. Li and R. C. Bradt, J. Mater. Sci. 21, 4366 (1986).
S. Figge, H. Kroncke, D. Hommel, and B. M. Epelbaum, Appl. Phys. Lett. 94, 101915 (2009).
C. Roder, S. Einfeldt, S. Figge, and D. Hommel, Phys. Rev. B: Condens. Matter 72, 085221 (2005).
L. B. Freund and S. Suresh, Thin Film Materials: Stress, Defect Formation and Surface Evolution (Cambridge University Press, Cambridge, 2003).
H. J. McSkimin, J. Appl. Phys. 24, 988 (1953).
G. F. Dirras, P. Djemia, Y. Roussigné, and K. M. Jackson, Mater. Sci. Eng., A 387–389, 302 (2004).
K. Kamitani, M. Grimsditch, J. C. Nipko, C.-K. Loong, M. Okada, and I. Kimura, J. App. Phys. 82(6), 3152 (1997).
C. Deger, E. Born, H. Angerer, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 72, 2400 (1998).
A. F. Wright, J. Appl. Phys. 82(6), 2833 (1997).
Z. Li and R. C. Bradt, J. Mater. Sci. 22, 2557 (1987).
R. R. Reeber and K. Wang, MRS Internet J. Nitride Semicond. Res. 6(3), 1 (2001).
H. W. Kunert and E. Lavitska, Cryst. Res. Technol. 36(8–10), 1045 (2001).
H. W. Kunert and J.-H. C. Schönfeldt, Thin Solid Films 428, 15 (2003).
S. A. Kukushkin and A. V. Osipov, Semiconductors 47(12), 1551 (2013).
V. V. Ratnikov, A. E. Kalmykov, A. V. Myasoedov, S. A. Kukushkin, A. V. Osipov, and L. M. Sorokin, Tech. Phys. Lett. 39(11), 994 (2013).
R. K. Annabattula and P. R. Onck, J. Appl. Phys. 109,033517 (2011).
B. Audoly, Phys. Rev. Lett. 83(20), 4124 (1999).
X. Gonze, B. Amadon, P.-M. Anglade, J.-M. Beuken, F. Bottin, P. Boulanger, F. Bruneval, D. Caliste, R. Caracas, M. Côté, T. Deutsch, L. Genovese, Ph. Ghosez, M. Giantomassi, S. Goedecker, D. R. Hamann, P. Hermet, F. Jollet, G. Jomard, S. Leroux, M. Mancini, S. Mazevet, M. J. T. Oliveira, G. Onida, Y. Pouil- lon, T. Rangel, G.-M. Rignanese, D. Sangalli, R. Shaltaf, M. Torrent, M. J. Verstraete, G. Zérah, and J. W. Zwanziger, Comput. Phys. Commun. 180, 2582 (2009). www.abinit.org.
A.A. Stekolnikov, J. Furthmüller, and F. Bechstedt, Phys. Rev. B: Condens. Matter 65, 115318 (2002).
T. Takai, T. Halicioglu, and W. A. Tiller, Surf. Sci. 164(2–3), 341 (1985).
D. Holec and P. H. Mayrhofer, Scr. Mater. 67, 760 (2012).
V. Jindal, PhD Thesis (University at Albany, State University of New York, Albany, New York, 2008).
Z. Y. Huang, W. Hong, and Z. Suo, J. Mech. Phys. Solids 53, 2101 (2005).
V. Jindal and F. Shahedipour-Sandvik, J. App. Phys. 105, 084902 (2009).
J. Kioseoglou, Ph. Komninou, and Th. Karakostas, Phys. Status Solidi A 206(8), 1931 (2009).
J. Tersoff, Appl. Phys. Lett. 62(7), 693 (1993).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © R.S. Telyatnik, A.V. Osipov, S.A. Kukushkin, 2015, published in Fizika Tverdogo Tela, 2015, Vol. 57, No. 1, pp. 153–162.
Rights and permissions
About this article
Cite this article
Telyatnik, R.S., Osipov, A.V. & Kukushkin, S.A. Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure. Phys. Solid State 57, 162–172 (2015). https://doi.org/10.1134/S106378341501031X
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S106378341501031X