Abstract
Ferroelectric films of betaine arsenate and partially deuterated betaine arsenate have been grown by evaporation on LiNbO3, α-Al2O3, and NdGaO3 substrates with a preliminarily deposited structure of interdigitated electrodes, as well as on the Al/glass substrate. This paper presents the results of the examination of the block structure of the films in a polarizing microscope, the X-ray diffraction analysis of their crystal structure, and the investigation of the dielectric properties in a measuring field oriented both parallel and perpendicular to the plane of the film. The transition of the films to the ferroelectric state at T = T c is accompanied by anomalies of the capacitance of the structure, an increase in the dielectric loss, and the appearance of dielectric hysteresis loops. The growth of the films from a solution of betaine arsenate in a heavy water leads to an increase in the ferroelectric transition temperature from T c = 119 K in the films without deuterium to T c = 149 K, which corresponds to the degree of deuteration of approximately 60–70%. The dielectric and structural properties of the films are compared with those of the betaine arsenate single crystals and the previously studied films of betaine phosphite and glycine phosphite.
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Original Russian Text © E.V. Balashova, B.B. Krichevtsov, N.V. Zaitseva, E.I. Yurko, F.B. Svinarev, 2014, published in Fizika Tverdogo Tela, 2014, Vol. 56, No. 12, pp. 2376–2383.
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Balashova, E.V., Krichevtsov, B.B., Zaitseva, N.V. et al. Dielectric and structural properties of ferroelectric betaine arsenate films. Phys. Solid State 56, 2461–2469 (2014). https://doi.org/10.1134/S1063783414120038
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DOI: https://doi.org/10.1134/S1063783414120038