Abstract
This paper presents the results of complex measurements of the microphotoluminescence spectra of quantum-well structures based on InGaN/GaN〈Sm〉 and the determination of the concentration and charge state of the Sm dopant. It has been shown that an increase in the magnetic field strength and the excitation intensity of the microphotoluminescence spectra leads to an increase in the luminescence intensity and a shift in the position of the maximum of the emission wavelength toward the short-wavelength region of the spectrum. Measurements of the microphotoluminescence spectra with variations in the external magnetic field strength, as well as with the introduction of paramagnetic and magnetic impurities, provide additional information on the mechanisms of formation of luminescence spectra in the quantum-well structures InGaN/GaN〈Sm〉,〈Eu + Sm〉. In the long-wavelength region, the influence of the magnetic field on the shape of the microphotoluminescence spectra of the InGaN/GaN structures doped with Sm and Sm + Eu is less pronounced than that in the short-wavelength region.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
V. V. Krivolapchuk, M. M. Mezdrogina, E. Yu. Danilovsky, and R. V. Kuz’min, Phys. Solid State 51(2), 388 (2009).
S. Yu. Karpov, K. A. Bulashevich, and V. F. Mymrin, in Abstracts of Papers of the Fifth All-Russian Conference “Gallium, Aluminum, and Indium Nitrides: Structures and Devices,” St. Petersburg, Russia, June 18–20, 2008 (St. Petersburg, 2008), p. 94.
N. I. Bochkareva, V. V. Voronkov, R. N. Gorbunov, A. S. Zubrilov, Yu. S. Lelikov, F. E. Latyshev, Yu. T. Rebane, A. I. Tsyuk, and Yu. G. Shreter, Semiconductors 44(6), 794 (2010).
V. V. Krivolapchuk, M. M. Mezdrogina, A. V. Nasonov, and S. N. Rodin, Phys. Solid State 45(9), 1634 (2003).
Y. Fujywara, A. Nishikawa, and Y. Terray, in Proceedings of the 18th Advanced Display Technologies International Symposium, St. Petersburg State Institute of Technology (Technical University), St. Petersburg, Russia, September 27–October 1, 2010 (St. Petersburg, 2010), p. 210.
Y. Liu, Ch. Xu, and Q. Yang, J. Appl. Phys. 105, 084701 (2009).
M. M. Mezdrogina, E. Yu. Danilovsky, and R. V. Kuz’min, Semiconductors 44(3), 321 (2010).
M. M. Mezdrogina, E. S. Moskalenko, and Yu. V. Kozhanova, Phys. Solid State 53(8), 1680 (2011).
V. V. Krivolapchuk and M. M. Mezdrogina, Phys. Solid State 48(11), 2187 (2006).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © M.M. Mezdrogina, E.S. Moskalenko, N.K. Poletaev, Yu.V. Kozhanova, 2013, published in Fizika Tverdogo Tela, 2013, Vol. 55, No. 5, pp. 962–967.
Rights and permissions
About this article
Cite this article
Mezdrogina, M.M., Moskalenko, E.S., Poletaev, N.K. et al. Influence of the magnetic field strength and excitation intensity on the shape of microphotoluminescence spectra of quantum-well structures based on GaN/InGaN doped with Sm and Eu + Sm. Phys. Solid State 55, 1043–1049 (2013). https://doi.org/10.1134/S1063783413050259
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783413050259