Abstract
The history of the growth of semiconductor crystals aboard space vehicles and their subsequent investigation has been described shortly. It has been shown using Ge(Ga), GaSb(Si), and GaSb(Te) crystals as an example that the formation of segregation growth striations can be avoided during their recrystallization by the vertical Bridgman method in conditions of physical simulation of microgravity on the Earth, mainly due to the essential weakening of the thermal gravitation convection. By their structure and impurity distribution, they approach the crystals grown in space. The investigation of recrystallization of Te has made it possible to determine the role of the detachment effect characteristic of the microgravity conditions and the features of the microstructure of the samples that crystallize with a free surface. The analysis of the results obtained from experiments in space allows us to better understand the processes occurring during the crystallization of the melts and to improve the crystal growth in terrestrial conditions.
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References
M. G. Mil’vidskii, N. A. Verezub, N. A. Kartavykh, E. S. Kopeliovich, A. I Prostomolotov, and V. V. Rakov, Crystallogr. Rep. 42(5), 843 (1997).
A. Eyer and H. Leiste, J. Cryst. Growth 71, 249 (1985).
A. I. Ivanov, V. S. Zemskov, V. N. Kubasov, V. N. Pimenov, I. N. Belokurova, K. P. Gurov, E. V. Demina, A. N. Titkov, and I. L. Shul’pina, Melting, Crystallization and Formation in Zero Gravity: The Experiment “Universal Furnace” on the Program “Soyuz-Apollo” (Nauka, Moscow, 1979) [in Russian].
H. C. Catos, A. F. Witt, M. Lichtensteiger, and C. J. Hermann, in Apollo-Soyuz Test Project: Summary Science Report, Vol. 1: Astronomy, Earth Atmosphere and Gravity Field, Life Sciences, and Materials Processing, Ed. by R. T. Giuli (National Aeronautics and Space Administration, Washington, 1977), pp. 429–447.
V. S. Zemskov, M. R. Raukhman, I. V. Barmin, A. S. Senchenkov, I. L. Shul’pina, and L. M. Sorokin, Fiz. Khim. Obrab. Mater., No. 5, 56 (1983).
V. S. Zemskov, in Proceedings of the VII All-Russia Symposium “Mechanics of Zero Gravity: The Results and Prospects of Fundamental Investigations of Gravitationally Sensitive Systems,” Moscow, April 11–14, 2000, pp. 34–51.
P. K. Volkov and B. G. Zakharov, Dokl. Phys. 43(8), 477 (1998).
R. V. Parfen’ev, I. I. Farbshtein, I. L. Shul’pina, S. V. Yakimov, V. P. Shalimov, A. M. Turchaninov, A. I. Ivanov, and S. F. Savin, Phys. Solid State 42(2), 244 (2000).
R. V. Parfen’ev, I. I. Farbshtein, I. L. Shul’pina, and S. V. Yakimov, Poverkhnost, No. 6, 34 (2004).
B. G. Zakharov, Yu. A. Ossipyan, Yu. A. Serebryakov. P. K. Volkov, I. A. Prokhorov, V. G. Kosoushkin, V. I. Polezhaev, and S. A. Nikitin, in Abstracts of Papers of the Joint X European and VI Russian Symposium on Physical Sciences in Microgravity, St. Petersburg, Russia, June 15–21, 1997, pp. 114–118.
V. S. Sidorov, B. G Zakharov, Yu. A. Serebryakov, A. V. Pereverzev, E. M. Nagaev, and V. I. Strelov, Instrum. Exp. Tech. 42(2), 279 (1999).
B. G. Zakharov, P. K. Volkov, Yu. A. Serebryakov, V. I. Strelov, and Yu. A. Osip’yan, Poverkhnost, No. 9, 48 (2001).
V. I. Strelov, B. G. Zakharov, V. S. Sidorov, I. Zh. Bezbakh, and V. K. Artem’ev, Poverkhnost, No. 10, 80 (2005).
I. A. Prokhorov, I. L. Shul’pina, V. I. Strelov, B. G. Zakharov, and V. V. Ratnikov, Phys. Status Solidi C 2(6), 1902 (2005).
I. A. Prokhorov, B. G. Zakharov, V. I. Strelov, V. V. Ratnikov, and I. L. Shul’pina, Poverkhnost, No. 6, 23 (2005).
Yu. A. Serebryakov, I. A. Prokhorov, V. N. Vlasov, E. N. Korobeinikova, B. G. Zakharov, I. L. Shulpina, M. P. Marchenko, and I. V. Fryazinov, J. Cryst. Growth 304, 11 (2007).
I. A. Prokhorov, Yu. A. Serebryakov, I. Zh. Bezbakh, B. G. Zakharov, M. P. Shcheglov, and I. L. Shul’pina, J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 3(6), 936 (2009).
I. A. Prokhorov, I. L. Shul’pina, Yu. A. Serebryakov, E. N. Korobeinikova, V. N. Vlasov, and I. Zh. Bezbakh, in Proceedings of the 5th International Scientific Workshop “Modern Methods of Analysis of Diffraction Data” Velikii Novgorod, Russia, September 12–16, 2011, p. 140.
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Original Russian Text © I.L. Shul’pina, B.G. Zakharov, R.V. Parfen’ev, I.I. Farbshtein, Yu.A. Serebryakov, I.A. Prokhorov, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 7, pp. 1264–1268.
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Shul’pina, I.L., Zakharov, B.G., Parfen’ev, R.V. et al. Some results of the growth of semiconductor crystals in microgravity conditions (to the 50th anniversary of Yuri Gagarin’s flight into space). Phys. Solid State 54, 1340–1344 (2012). https://doi.org/10.1134/S1063783412070323
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DOI: https://doi.org/10.1134/S1063783412070323