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Influence of the regime of plastic deformation on the magnetic properties of single-crystal silicon Cz-Si

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Abstract

A variation has been revealed in electron paramagnetic resonance spectra of single-crystal silicon Cz-Si plates plastically deformed by bending and torsion. The plastic deformation of the silicon plates is accompanied by the introduction of dislocations (∼107 cm−2) and leads to the appearance of new lines in the electron paramagnetic resonance spectrum of the sample. The paramagnetic centers introduced during bending and torsion, as well as their electron paramagnetic resonance spectra, differ from those previously studied under conditions of uniaxial deformation. The plastic deformation results in a significant increase in the diamagnetic component of the magnetic susceptibility, which exceeds the increase in the paramagnetic component for the magnetic susceptibility of the Cz-Si crystals.

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References

  1. I. I. Soloshenko and A. F. Zolotarev, Mechanisms of Internal Friction in Semiconductor and Metal Materials (Nauka, Moscow, 1972), p. 35 [in Russian].

    Google Scholar 

  2. A. M. Orlov, A. A. Skvortsov, and A. A. Solov’ev, JETP 96(3), 523 (2003).

    Article  ADS  Google Scholar 

  3. M. V. Badylevich, Yu. L. Iunin, V. V. Kveder, V. I. Orlov, and Yu. A. Osip’yan, JETP 97(3), 601 (2003).

    Article  ADS  Google Scholar 

  4. I. Yonenaga, K. Takahashi, T. Taishi, and Y. Ohno, Physica B (Amsterdam) 401, 148 (2007).

    Article  ADS  Google Scholar 

  5. I. Yonenaga and K. Takahashi, J. Appl. Phys. 101, 053528 (2007).

    Article  ADS  Google Scholar 

  6. R. B. Morgunov, Phys.—Usp. 47(2), 125 (2004).

    Article  ADS  Google Scholar 

  7. Yu. A. Ossipyan, R. B. Morgunov, A. A. Baskakov, A. M. Orlov, A. A. Skvortsov, E. N. Inkina, and Y. Tanimoto, JETP Lett. 79(3), 126 (2004).

    Article  ADS  Google Scholar 

  8. M. Badylevich, V. Kveder, V. Orlov, and Yu. Ossipyan, Phys. Status Solidi C 2, 1869 (2005).

    Article  ADS  Google Scholar 

  9. H. Alexander, R. Labusch, and W. Sander, Solid State Commun. 3, 357 (1965).

    Article  ADS  Google Scholar 

  10. F. D. Wohler, H. Alexander, and W. Sander, J. Phys. Chem. Solids 31, 1381 (1970).

    Article  ADS  Google Scholar 

  11. U. Schmidt, E. Weber, H. Alexander, and W. Sander, Solid State Commun. 14, 735 (1974).

    Article  ADS  Google Scholar 

  12. V. A. Grazhulis and Yu. A. Osip’yan, Sov. Phys. JETP 31, 677 (1970).

    ADS  Google Scholar 

  13. V. A. Grazhulis and Yu. A. Osip’yan, Sov. Phys. JETP 33, 623 (1971).

    ADS  Google Scholar 

  14. V. V. Kveder and Yu. A. Osip’yan, Sov. Phys. Semicond. 16(11), 1246 (1982).

    Google Scholar 

  15. S. V. Broude, V. A. Grazhulis, V. V. Kveder, and Yu. A. Osip’yan, Sov. Phys. JETP 39(4), 721 (1974).

    ADS  Google Scholar 

  16. M. N. Zolotukhin, V. V. Kveder, and Yu. A. Osip’yan, Sov. Phys. JETP 54(1), 160 (1981).

    Google Scholar 

  17. V. V. Kveder and Yu. A. Osip’yan, Sov. Phys. JETP 53(3), 618 (1981).

    Google Scholar 

  18. Yu. A. Osip’yan, S. I. Bredikhin, V. V. Kveder, N. V. Klassen, V. D. Negrii, V. F. Petrenko, I. S. Smirnova, S. A. Shevchenko, S. Z. Shmurak, and E. A. Shteinman, Electronic Properties of Dislocations in Semiconductors (Editorial URSS, Moscow, 2000) [in Russian].

    Google Scholar 

  19. V. S. Kovalenko, Metallographic Reagents (Metallurgiya, Moscow, 1981) [in Russian].

    Google Scholar 

  20. G. W. Ludwig and H. H. Woodbury, Electron Spin Resonance in Semiconductors (Academic, New York, 1962; Inostrannaya Literatura, Moscow, 1962).

    Google Scholar 

  21. K. Ravi, Imperfections and Impurities in Semiconductor Silicon (Wiley, New York, 1981; Mir, Moscow, 1984).

    Google Scholar 

  22. A. Goltzene, G. Poiblaud, and C. Schwab, J. Appl. Phys. 50, 5425 (1979).

    Article  ADS  Google Scholar 

  23. C. A. J. Ammerlaan, Defect Complexes in Semiconductor Structures (Springer, Amsterdam, 1983), vol. 175, p. 111.

    Book  Google Scholar 

  24. S. Hudgens, M. Kastner, and H. Fritzsche, Phys. Rev. Lett. 33, 1552 (1974).

    Article  ADS  Google Scholar 

  25. A. Roy, M. Turner, and M. P. Sarachik, Phys. Rev. B: Condens. Matter 37, 5522 (1988).

    Article  ADS  Google Scholar 

  26. M. P. Sarachik, D. R. He, W. Li, M. Levy, and J. S. Brooks, Phys. Rev. B: Condens. Matter 31, 1469 (1985).

    Article  ADS  Google Scholar 

  27. R. B. Morgunov, A. I. Dmitriev, Y. Tanimoto, and O. Kazakova, J. Appl. Phys. 105, 093922 (2009).

    Article  ADS  Google Scholar 

  28. R. B. Morgunov, A. I. Dmitriev, F. B. Mushenok, and O. L. Kazakova, Semiconductors 43(7), 896 (2009).

    Article  ADS  Google Scholar 

  29. M. Farle, Rep. Prog. Phys. 61, 755 (1998).

    Article  ADS  Google Scholar 

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Correspondence to A. I. Dmitriev.

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Original Russian Text © A.I. Dmitriev, A.A. Skvortsov, O.V. Koplak, R.B. Morgunov, I.I. Proskuryakov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 8, pp. 1473–1478.

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Dmitriev, A.I., Skvortsov, A.A., Koplak, O.V. et al. Influence of the regime of plastic deformation on the magnetic properties of single-crystal silicon Cz-Si. Phys. Solid State 53, 1547–1553 (2011). https://doi.org/10.1134/S1063783411080099

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  • DOI: https://doi.org/10.1134/S1063783411080099

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