Abstract
A variation has been revealed in electron paramagnetic resonance spectra of single-crystal silicon Cz-Si plates plastically deformed by bending and torsion. The plastic deformation of the silicon plates is accompanied by the introduction of dislocations (∼107 cm−2) and leads to the appearance of new lines in the electron paramagnetic resonance spectrum of the sample. The paramagnetic centers introduced during bending and torsion, as well as their electron paramagnetic resonance spectra, differ from those previously studied under conditions of uniaxial deformation. The plastic deformation results in a significant increase in the diamagnetic component of the magnetic susceptibility, which exceeds the increase in the paramagnetic component for the magnetic susceptibility of the Cz-Si crystals.
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References
I. I. Soloshenko and A. F. Zolotarev, Mechanisms of Internal Friction in Semiconductor and Metal Materials (Nauka, Moscow, 1972), p. 35 [in Russian].
A. M. Orlov, A. A. Skvortsov, and A. A. Solov’ev, JETP 96(3), 523 (2003).
M. V. Badylevich, Yu. L. Iunin, V. V. Kveder, V. I. Orlov, and Yu. A. Osip’yan, JETP 97(3), 601 (2003).
I. Yonenaga, K. Takahashi, T. Taishi, and Y. Ohno, Physica B (Amsterdam) 401, 148 (2007).
I. Yonenaga and K. Takahashi, J. Appl. Phys. 101, 053528 (2007).
R. B. Morgunov, Phys.—Usp. 47(2), 125 (2004).
Yu. A. Ossipyan, R. B. Morgunov, A. A. Baskakov, A. M. Orlov, A. A. Skvortsov, E. N. Inkina, and Y. Tanimoto, JETP Lett. 79(3), 126 (2004).
M. Badylevich, V. Kveder, V. Orlov, and Yu. Ossipyan, Phys. Status Solidi C 2, 1869 (2005).
H. Alexander, R. Labusch, and W. Sander, Solid State Commun. 3, 357 (1965).
F. D. Wohler, H. Alexander, and W. Sander, J. Phys. Chem. Solids 31, 1381 (1970).
U. Schmidt, E. Weber, H. Alexander, and W. Sander, Solid State Commun. 14, 735 (1974).
V. A. Grazhulis and Yu. A. Osip’yan, Sov. Phys. JETP 31, 677 (1970).
V. A. Grazhulis and Yu. A. Osip’yan, Sov. Phys. JETP 33, 623 (1971).
V. V. Kveder and Yu. A. Osip’yan, Sov. Phys. Semicond. 16(11), 1246 (1982).
S. V. Broude, V. A. Grazhulis, V. V. Kveder, and Yu. A. Osip’yan, Sov. Phys. JETP 39(4), 721 (1974).
M. N. Zolotukhin, V. V. Kveder, and Yu. A. Osip’yan, Sov. Phys. JETP 54(1), 160 (1981).
V. V. Kveder and Yu. A. Osip’yan, Sov. Phys. JETP 53(3), 618 (1981).
Yu. A. Osip’yan, S. I. Bredikhin, V. V. Kveder, N. V. Klassen, V. D. Negrii, V. F. Petrenko, I. S. Smirnova, S. A. Shevchenko, S. Z. Shmurak, and E. A. Shteinman, Electronic Properties of Dislocations in Semiconductors (Editorial URSS, Moscow, 2000) [in Russian].
V. S. Kovalenko, Metallographic Reagents (Metallurgiya, Moscow, 1981) [in Russian].
G. W. Ludwig and H. H. Woodbury, Electron Spin Resonance in Semiconductors (Academic, New York, 1962; Inostrannaya Literatura, Moscow, 1962).
K. Ravi, Imperfections and Impurities in Semiconductor Silicon (Wiley, New York, 1981; Mir, Moscow, 1984).
A. Goltzene, G. Poiblaud, and C. Schwab, J. Appl. Phys. 50, 5425 (1979).
C. A. J. Ammerlaan, Defect Complexes in Semiconductor Structures (Springer, Amsterdam, 1983), vol. 175, p. 111.
S. Hudgens, M. Kastner, and H. Fritzsche, Phys. Rev. Lett. 33, 1552 (1974).
A. Roy, M. Turner, and M. P. Sarachik, Phys. Rev. B: Condens. Matter 37, 5522 (1988).
M. P. Sarachik, D. R. He, W. Li, M. Levy, and J. S. Brooks, Phys. Rev. B: Condens. Matter 31, 1469 (1985).
R. B. Morgunov, A. I. Dmitriev, Y. Tanimoto, and O. Kazakova, J. Appl. Phys. 105, 093922 (2009).
R. B. Morgunov, A. I. Dmitriev, F. B. Mushenok, and O. L. Kazakova, Semiconductors 43(7), 896 (2009).
M. Farle, Rep. Prog. Phys. 61, 755 (1998).
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Original Russian Text © A.I. Dmitriev, A.A. Skvortsov, O.V. Koplak, R.B. Morgunov, I.I. Proskuryakov, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 8, pp. 1473–1478.
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Dmitriev, A.I., Skvortsov, A.A., Koplak, O.V. et al. Influence of the regime of plastic deformation on the magnetic properties of single-crystal silicon Cz-Si. Phys. Solid State 53, 1547–1553 (2011). https://doi.org/10.1134/S1063783411080099
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DOI: https://doi.org/10.1134/S1063783411080099