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Mobility of 2D-electrons in scattering on a correlated distribution of impurity ions in doped thin layers

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Abstract

The spatial correlations of impurity ions in doped thin layers have been considered. A model of hard spheres on the plane has been developed for describing the correlations. In this model, an analytical expression has been obtained for the structure factor of 2D-electrons. The concentration dependences of the mobility of 2D-electrons in heterostructures with separate doping have been investigated using Al x Ga1 − x As/GaAs as an example.

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Authors and Affiliations

  1. Institute of Metal Physics, Ural Branch Russian Academy of Sciences, ul. Sof’i Kovalevskoi 18, Yekaterinburg, 620219, Russia

    V. M. Mikheev

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  1. V. M. Mikheev
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Correspondence to V. M. Mikheev.

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Original Russian Text © V.M. Mikheev, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 4, pp. 807–813.

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Mikheev, V.M. Mobility of 2D-electrons in scattering on a correlated distribution of impurity ions in doped thin layers. Phys. Solid State 53, 864–871 (2011). https://doi.org/10.1134/S106378341104024X

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  • DOI: https://doi.org/10.1134/S106378341104024X

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