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Effect of bismuth dopant on the dielectric properties of modified As2Se3

  • Semiconductors
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Abstract

A comparative analysis has been performed for the specific features of the dispersion of the components of the complex permittivity for pure and bismuth-doped thin films of amorphous arsenic triselenide. A correlation between the experimental data and theoretical calculations of similar characteristics obtained in previous studies has been found. The mechanisms of the effects observed have been discussed.

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Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, nab. Reki Moiki 48, St. Petersburg, 191186, Russia

    R. A. Castro, N. I. Anisimova, V. A. Bordovsky & G. I. Grabko

Authors
  1. R. A. Castro
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  2. N. I. Anisimova
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  3. V. A. Bordovsky
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  4. G. I. Grabko
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Correspondence to R. A. Castro.

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Original Russian Text © R.A. Castro, N.I. Anisimova, V.A. Bordovsky, G.I. Grabko, 2011, published in Fizika Tverdogo Tela, 2011, Vol. 53, No. 3, pp. 430–432.

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Castro, R.A., Anisimova, N.I., Bordovsky, V.A. et al. Effect of bismuth dopant on the dielectric properties of modified As2Se3 . Phys. Solid State 53, 458–461 (2011). https://doi.org/10.1134/S1063783411030140

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  • DOI: https://doi.org/10.1134/S1063783411030140

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