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Electrical, optical and structural properties of rod shaped Bi2S3 thin films deposited by dip technique

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Abstract

In the present paper, we have reported the room temperature growth of bismuth sulphide (Bi2S3) thin films by dip method and detailed characterization of these films. The films were deposited from a reaction bath containing bismuth nitrate, glycine and sodium thiosulphate. We have analyzed the structure, morphology, composition, optical and electrical properties of Bi2S3 thin films. X-ray diffraction pattern showed that the films were polycrystalline. From optical absorption spectra the band gap of the material is estimated to be 1.6 eV. The electrical conductivity is of the order of 10−6 (Ω cm)−1. Composition analyses by EDAX show that the films are nearly stoichiometric in composition.

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Acknowledgments

The author (PAC) thankfully acknowledges to Dr. D.J. Sathe (KIT) for valuable discussion during research and preparation of manuscript.

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Authors and Affiliations

  1. Department of Chemistry, J.S.M. College, Alibag, Maharashtra, India

    P. A. Chate

  2. JJT University, Jhunjhunu, Rajasthan, India

    S. D. Lakde

  3. Bhausaheb Nene College, Pen, Maharashtra, India

    S. D. Lakde

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  1. P. A. Chate
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  2. S. D. Lakde
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Correspondence to P. A. Chate.

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Chate, P.A., Lakde, S.D. Electrical, optical and structural properties of rod shaped Bi2S3 thin films deposited by dip technique. J Mater Sci: Mater Electron 26, 5847–5851 (2015). https://doi.org/10.1007/s10854-015-3145-6

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  • DOI: https://doi.org/10.1007/s10854-015-3145-6

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