Abstract
The initial stages of germanium growth on the Si(7 7 10) surface containing regular atomic steps with a height of three interplanar spacings were investigated using scanning tunneling microscopy. This surface was previously referred to in the literature as (557). The dependence of the morphology and structure of the Si(7 7 10) surface on the coverage and deposition temperature of germanium was studied. It was demonstrated that the formation of three types of nanowires is possible on this surface.
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Original Russian Text © R.A. Zhachuk, K.N. Romanyuk, S.A. Teys, B.Z. Olshanetsky, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 1, pp. 189–194.
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Zhachuk, R.A., Romanyuk, K.N., Teys, S.A. et al. Initial stages of germanium growth on the Si(7 7 10) surface. Phys. Solid State 51, 202–207 (2009). https://doi.org/10.1134/S1063783409010259
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DOI: https://doi.org/10.1134/S1063783409010259