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Adsorption on amorphous semiconductors: A modified Haldane-Anderson model

  • Defects and Impurity Centers, Dislocations, and Physics of Strength
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Abstract

The Haldane-Anderson model previously used for describing the adsorption on a crystalline substrate is generalized to the case of an amorphous substrate. It is demonstrated that the main difference between the occupation numbers of the adatom is observed in the case where the atomic level overlaps with the band gap (for a crystalline semiconductor) and the mobility gap (for an amorphous semiconductor). The adatom charge on the amorphous substrate is smaller than that on the crystalline substrate.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    S. Yu. Davydov

  2. Saint Petersburg State Electrotechnical University (LÉTI), ul. Professora Popova 5, St. Petersburg, 197376, Russia

    S. V. Troshin

Authors
  1. S. Yu. Davydov
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  2. S. V. Troshin
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Correspondence to S. Yu. Davydov.

Additional information

Original Russian Text © S.Yu. Davydov, S.V. Troshin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 7, pp. 1206–1210.

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Davydov, S.Y., Troshin, S.V. Adsorption on amorphous semiconductors: A modified Haldane-Anderson model. Phys. Solid State 50, 1256–1260 (2008). https://doi.org/10.1134/S1063783408070111

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  • DOI: https://doi.org/10.1134/S1063783408070111

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