Abstract
The micromechanical properties of Te-doped GaAs single crystals with free carrier density n 0 = 1017−5 × 1018 cm−3 were studied. The obtained data are as follows: the nonmonotonic concentration dependences of the microhardness, the lengths of dislocation rosette rays, the densities of dislocations, and the position and half-width of the Raman line of a transverse optical phonon. The data are interpreted in terms of spatial correlation in the impurity defect distribution.
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Original Russian Text © V.A. Bogdanova, N.A. Davletkil’deev, M.M. Nukenov, N.A. Semikolenova, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 2, pp. 236–241.
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Bogdanova, V.A., Davletkil’deev, N.A., Nukenov, M.M. et al. Effect of correlation in the impurity defect distribution on the micromechanical properties of GaAs: Te single crystals. Phys. Solid State 50, 244–249 (2008). https://doi.org/10.1134/S1063783408020066
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DOI: https://doi.org/10.1134/S1063783408020066